FET - 单元器件大全_分立半导体产品-中电网

厂商	包装	系列	FET类型	FET功能	漏源极电压（Vdss）	电流-连续漏极（Id）（25°C时）	不同Id，Vgs时的RdsOn（最大值）	不同Id时的Vgs（th）（最大值）	不同Vgs时的栅极电荷（Qg）	不同Vds时的输入电容（Ciss）	功率-最大值	安装类型	封装/外壳	供应商器件封装

器件名称	制造商	描述
TK50P03M1(T6RSS-Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 50A DP TO252-3
SSM3K15ACT,L3F	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 0.1A CST3
SSM3K15ACT,L3F	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 0.1A CST3
SSM3K15ACT,L3F	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 0.1A CST3
TPH6R003NL,LQ	Toshiba Semiconductor and Storage	MOSFET N CH 30V 38A 8SOP
TPH6R003NL,LQ	Toshiba Semiconductor and Storage	MOSFET N CH 30V 38A 8SOP
TPH6R003NL,LQ	Toshiba Semiconductor and Storage	MOSFET N CH 30V 38A 8SOP
SSM6J207FE,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 1.4A ES6
SSM6J207FE,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 1.4A ES6
SSM6J207FE,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 1.4A ES6
TPCF8101(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET P-CH 12V 6A VS-8
TPCF8101(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET P-CH 12V 6A VS-8
TPCF8101(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET P-CH 12V 6A VS-8
TK7A90E,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 900V TO220SIS
TK6A80E,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 800V TO220SIS
SSM3K15CT(TPL3)	Toshiba Semiconductor and Storage	MOSFET N-CH SGL 30V 0.1A CST3
SSM3K15CT(TPL3)	Toshiba Semiconductor and Storage	MOSFET N-CH SGL 30V 0.1A CST3
SSM3K15CT(TPL3)	Toshiba Semiconductor and Storage	MOSFET N-CH SGL 30V 0.1A CST3
TK9A90E,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 900V TO220SIS
SSM3J334R,LF	Toshiba Semiconductor and Storage	MOSFET P CH 30V 4A SOT-23F