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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IRF740A IRF740A Vishay Siliconix MOSFET N-CH 400V 10A TO-220AB
IRFI820G IRFI820G Vishay Siliconix MOSFET N-CH 500V 2.1A TO220FP
IRFZ40 IRFZ40 Vishay Siliconix MOSFET N-CH 60V 50A TO220AB
IRLI630G IRLI630G Vishay Siliconix MOSFET N-CH 200V 6.2A TO220FP
IRFZ44R IRFZ44R Vishay Siliconix MOSFET N-CH 60V 50A TO-220AB
SIE876DF-T1-GE3 SIE876DF-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 60A POLARPAK
SIE876DF-T1-GE3 SIE876DF-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 60A POLARPAK
SIE876DF-T1-GE3 SIE876DF-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 60A POLARPAK
SIHP30N60E-GE3 SIHP30N60E-GE3 Vishay Siliconix MOSFET N-CH 600V 29A TO220AB
IRFP048RPBF IRFP048RPBF Vishay Siliconix MOSFET N-CH 60V 70A TO-247AC
IRF9Z34 IRF9Z34 Vishay Siliconix MOSFET P-CH 60V 18A TO-220AB
IRF9Z30 IRF9Z30 Vishay Siliconix MOSFET P-CH 50V 18A TO-220AB
SIHB30N60E-E3 SIHB30N60E-E3 Vishay Siliconix MOSFET N-CH 600V 29A D2PAK
SIHF30N60E-GE3 SIHF30N60E-GE3 Vishay Siliconix MOSFET N-CH 600V 29A TO220
IRFBG20 IRFBG20 Vishay Siliconix MOSFET N-CH 1000V 1.4A TO-220AB
IRFBG30 IRFBG30 Vishay Siliconix MOSFET N-CH 1000V 3.1A TO-220AB
IRFIZ44G IRFIZ44G Vishay Siliconix MOSFET N-CH 60V 30A TO220FP
SIHG32N50D-E3 SIHG32N50D-E3 Vishay Siliconix MOSFET N-CH 500V 30A TO-247AC
IRFI830G IRFI830G Vishay Siliconix MOSFET N-CH 500V 3.1A TO220FP
IRFIBE20G IRFIBE20G Vishay Siliconix MOSFET N-CH 800V 1.4A TO220FP
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