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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
FDC3601N FDC3601N Fairchild Semiconductor MOSFET 2N-CH 100V 1A SSOT-6
FDMA3023PZ FDMA3023PZ Fairchild Semiconductor MOSFET 2P-CH 30V 2.9A MICROFET6
FDMA3023PZ FDMA3023PZ Fairchild Semiconductor MOSFET 2P-CH 30V 2.9A MICROFET6
FDMA3023PZ FDMA3023PZ Fairchild Semiconductor MOSFET 2P-CH 30V 2.9A MICROFET6
FDG6335N FDG6335N Fairchild Semiconductor MOSFET 2N-CH 20V 0.7A SOT-363
FDG6335N FDG6335N Fairchild Semiconductor MOSFET 2N-CH 20V 0.7A SOT-363
FDG6335N FDG6335N Fairchild Semiconductor MOSFET 2N-CH 20V 0.7A SOT-363
FDC6304P FDC6304P Fairchild Semiconductor MOSFET 2P-CH 25V 0.46A SSOT-6
FDC6304P FDC6304P Fairchild Semiconductor MOSFET 2P-CH 25V 0.46A SSOT-6
FDC6304P FDC6304P Fairchild Semiconductor MOSFET 2P-CH 25V 0.46A SSOT-6
FDG6318P FDG6318P Fairchild Semiconductor MOSFET 2P-CH 20V 0.5A SC70-6
FDG6318P FDG6318P Fairchild Semiconductor MOSFET 2P-CH 20V 0.5A SC70-6
FDG6318P FDG6318P Fairchild Semiconductor MOSFET 2P-CH 20V 0.5A SC70-6
FDC6310P FDC6310P Fairchild Semiconductor MOSFET 2P-CH 20V 2.2A SSOT-6
FDC6310P FDC6310P Fairchild Semiconductor MOSFET 2P-CH 20V 2.2A SSOT-6
FDC6310P FDC6310P Fairchild Semiconductor MOSFET 2P-CH 20V 2.2A SSOT-6
FDS4897C FDS4897C Fairchild Semiconductor MOSFET N/P-CH 40V 8-SOIC
FDS4897C FDS4897C Fairchild Semiconductor MOSFET N/P-CH 40V 8-SOIC
FDS4897C FDS4897C Fairchild Semiconductor MOSFET N/P-CH 40V 8-SOIC
FDS6912A FDS6912A Fairchild Semiconductor MOSFET 2N-CH 30V 6A 8SOIC
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