中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 264265266267268269270271272273274
PDF 缩略图 器件名称 制造商 描述
SI4554DY-T1-GE3 SI4554DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 8A 8SO
SI5515CDC-T1-E3 SI5515CDC-T1-E3 Vishay Siliconix MOSFET N/P-CH 20V 4A 1206-8
SI3590DV-T1-GE3 SI3590DV-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 2.5A 6-TSOP
SI3951DV-T1-GE3 SI3951DV-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 2.7A 6-TSOP
SI3993DV-T1-GE3 SI3993DV-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 1.8A 6-TSOP
SI4228DY-T1-E3 SI4228DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8SO
SI4214DDY-T1-E3 SI4214DDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 8.5A 8SO
SI4952DY-T1-GE3 SI4952DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8-SOIC
SI4952DY-T1-GE3 SI4952DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8-SOIC
SI4952DY-T1-GE3 SI4952DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8-SOIC
SI4952DY-T1-E3 SI4952DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 25V 8A 8-SOIC
1... 264265266267268269270271272273274