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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4942DY-T1-E3 SI4942DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 5.3A 8-SOIC
SI4942DY-T1-E3 SI4942DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 5.3A 8-SOIC
SI4942DY-T1-E3 SI4942DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 5.3A 8-SOIC
SQJ962EP-T1-GE3 SQJ962EP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 8A 8SO
SIZ910DT-T1-GE3 SIZ910DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 40A POWERPAIR
SIZ910DT-T1-GE3 SIZ910DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 40A POWERPAIR
SIZ910DT-T1-GE3 SIZ910DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 40A POWERPAIR
SI7905DN-T1-GE3 SI7905DN-T1-GE3 Vishay Siliconix MOSFET 2P-CH 40V 6A PPAK 1212-8
SI7905DN-T1-GE3 SI7905DN-T1-GE3 Vishay Siliconix MOSFET 2P-CH 40V 6A PPAK 1212-8
SI7905DN-T1-GE3 SI7905DN-T1-GE3 Vishay Siliconix MOSFET 2P-CH 40V 6A PPAK 1212-8
SIA906EDJ-T1-GE3 SIA906EDJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 4.5A SC70-6
SIA906EDJ-T1-GE3 SIA906EDJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 4.5A SC70-6
SIA906EDJ-T1-GE3 SIA906EDJ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 4.5A SC70-6
SIA921EDJ-T1-GE3 SIA921EDJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6
SIA921EDJ-T1-GE3 SIA921EDJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6
SIA921EDJ-T1-GE3 SIA921EDJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6
SI4532CDY-T1-GE3 SI4532CDY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 6A 8-SOIC
SI4532CDY-T1-GE3 SI4532CDY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 6A 8-SOIC
SI4532CDY-T1-GE3 SI4532CDY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 6A 8-SOIC
SI4202DY-T1-GE3 SI4202DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 12.1A 8SO
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