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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4564DY-T1-GE3 SI4564DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 10A 8SOIC
SI4564DY-T1-GE3 SI4564DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 10A 8SOIC
SI4564DY-T1-GE3 SI4564DY-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 10A 8SOIC
SI4204DY-T1-GE3 SI4204DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 19.8A 8-SOIC
SI4204DY-T1-GE3 SI4204DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 19.8A 8-SOIC
SI4204DY-T1-GE3 SI4204DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 19.8A 8-SOIC
SI1035X-T1-GE3 SI1035X-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC-89
SI1035X-T1-GE3 SI1035X-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC-89
SI1035X-T1-GE3 SI1035X-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V SC-89
SIZ340DT-T1-GE3 SIZ340DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 30A SOT-23
SIZ340DT-T1-GE3 SIZ340DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 30A SOT-23
SIZ340DT-T1-GE3 SIZ340DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 30A SOT-23
SI5906DU-T1-GE3 SI5906DU-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6A PPAK FET
SI5906DU-T1-GE3 SI5906DU-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6A PPAK FET
SI5906DU-T1-GE3 SI5906DU-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6A PPAK FET
SIZ702DT-T1-GE3 SIZ702DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A POWERPAIR
SIZ702DT-T1-GE3 SIZ702DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A POWERPAIR
SIZ702DT-T1-GE3 SIZ702DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A POWERPAIR
SIZ916DT-T1-GE3 SIZ916DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A POWERPAIR
SIZ916DT-T1-GE3 SIZ916DT-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 16A POWERPAIR
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