中电网首页

产品索引  > 分立半导体产品 > FET - 阵列

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 260261262263264265266267268269270 274
PDF 缩略图 器件名称 制造商 描述
SI6966EDQ-T1-E3 SI6966EDQ-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 8TSSOP
SI6966EDQ-T1-GE3 SI6966EDQ-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 8TSSOP
SI6967DQ-T1-E3 SI6967DQ-T1-E3 Vishay Siliconix MOSFET 2P-CH 8V 8TSSOP
SI6967DQ-T1-GE3 SI6967DQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 8V 8TSSOP
SI6969BDQ-T1-GE3 SI6969BDQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4A 8TSSOP
SI6969DQ-T1-E3 SI6969DQ-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 8TSSOP
SI6969DQ-T1-GE3 SI6969DQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 8TSSOP
SI6973DQ-T1-E3 SI6973DQ-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 4.1A 8TSSOP
SI6973DQ-T1-GE3 SI6973DQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.1A 8TSSOP
SI6983DQ-T1-GE3 SI6983DQ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.6A 8TSSOP
SI7901EDN-T1-E3 SI7901EDN-T1-E3 Vishay Siliconix MOSFET 2P-CH 20V 4.3A 1212-8
SI7901EDN-T1-GE3 SI7901EDN-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.3A 1212-8
SI7904DN-T1-E3 SI7904DN-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 5.3A 1212-8
SI7904DN-T1-GE3 SI7904DN-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 5.3A 1212-8
SI7909DN-T1-E3 SI7909DN-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 5.3A 1212-8
SI7909DN-T1-GE3 SI7909DN-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 5.3A 1212-8
SI7925DN-T1-E3 SI7925DN-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 4.8A 1212-8
SI7925DN-T1-GE3 SI7925DN-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 4.8A 1212-8
SI7940DP-T1-E3 SI7940DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 12V 7.6A PPAK SO-8
SI7964DP-T1-GE3 SI7964DP-T1-GE3 Vishay Siliconix MOSFET 2N-CH 60V 6.1A PPAK SO-8
1... 260261262263264265266267268269270 274