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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4834BDY-T1-GE3 SI4834BDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 5.7A 8-SOIC
SI4908DY-T1-GE3 SI4908DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 5A 8-SOIC
SI4920DY-T1-GE3 SI4920DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 8-SOIC
SI4923DY-T1-E3 SI4923DY-T1-E3 Vishay Siliconix MOSFET 2P-CH 30V 6.2A 8-SOIC
SI4923DY-T1-GE3 SI4923DY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 6.2A 8-SOIC
SI4933DY-T1-GE3 SI4933DY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 7.4A 8-SOIC
SI4940DY-T1-E3 SI4940DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 40V 4.2A 8-SOIC
SI4940DY-T1-GE3 SI4940DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 4.2A 8-SOIC
SI4942DY-T1-GE3 SI4942DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 40V 5.3A 8-SOIC
SI4944DY-T1-GE3 SI4944DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 9.3A 8-SOIC
SI4965DY-T1-E3 SI4965DY-T1-E3 Vishay Siliconix MOSFET 2P-CH 8V 8SOIC
SI4965DY-T1-GE3 SI4965DY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 8V 8SOIC
SI4967DY-T1-E3 SI4967DY-T1-E3 Vishay Siliconix MOSFET 2P-CH 12V 8SOIC
SI4967DY-T1-GE3 SI4967DY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 12V 8SOIC
SI4972DY-T1-GE3 SI4972DY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 10.8A 8-SOIC
SI4973DY-T1-GE3 SI4973DY-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 5.8A 8SOIC
SI5504DC-T1-GE3 SI5504DC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 30V 2.9A 1206-8
SI5509DC-T1-GE3 SI5509DC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 6.1A 1206-8
SI5513DC-T1-GE3 SI5513DC-T1-GE3 Vishay Siliconix MOSFET N/P-CH 20V 3.1A 1206-8
SI5903DC-T1-GE3 SI5903DC-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 2.1A 1206-8
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