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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI7980DP-T1-E3 SI7980DP-T1-E3 Vishay Siliconix MOSFET 2N-CH 20V 8A PPAK SO-8
SI7983DP-T1-GE3 SI7983DP-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 7.7A PPAK SO-8
SI9926BDY-T1-GE3 SI9926BDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 20V 6.2A 8-SOIC
SI9936BDY-T1-GE3 SI9936BDY-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 4.5A 8-SOIC
SIA911DJ-T1-GE3 SIA911DJ-T1-GE3 Vishay Siliconix MOSFET 2P-CH 20V 4.5A SC70-6
SQ4946EY-T1-E3 SQ4946EY-T1-E3 Vishay Siliconix MOSFET 2N-CH 60V 4.5A 8SOIC
SQ9945AEY-T1-E3 SQ9945AEY-T1-E3 Vishay Siliconix MOSFET 2N-CH 60V 3.7A 8SOIC
SQJ941EP-T1-GE3 SQJ941EP-T1-GE3 Vishay Siliconix MOSFET 2P-CH 30V 8A PPAK SO-8
SI9936BDY-T1-E3 SI9936BDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 4.5A 8-SOIC
SI9936BDY-T1-E3 SI9936BDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 4.5A 8-SOIC
SI9936BDY-T1-E3 SI9936BDY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 4.5A 8-SOIC
SI4542DY-T1-E3 SI4542DY-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 8-SOIC
SI4542DY-T1-E3 SI4542DY-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 8-SOIC
SI4542DY-T1-E3 SI4542DY-T1-E3 Vishay Siliconix MOSFET N/P-CH 30V 8-SOIC
SI4816DY-T1-E3 SI4816DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 5.3A 8-SOIC
SI4816DY-T1-E3 SI4816DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 5.3A 8-SOIC
SI4816DY-T1-E3 SI4816DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 5.3A 8-SOIC
SI4920DY-T1-E3 SI4920DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 8-SOIC
SI4920DY-T1-E3 SI4920DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 8-SOIC
SI4920DY-T1-E3 SI4920DY-T1-E3 Vishay Siliconix MOSFET 2N-CH 30V 8-SOIC
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