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厂商 包装系列IGBT类型电压-集射极击穿(最大值)电流-集电极(Ic)(最大值)脉冲电流-集电极(Icm)不同Vge,Ic时的Vce(on)功率-最大值开关能量输入类型栅极电荷25°C时Td(开/关)值测试条件反向恢复时间(trr)封装/外壳安装类型供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
NGB8207ABNT4G NGB8207ABNT4G ON Semiconductor IGBT 365V 20A 165W D2PAK3
NGB8207ABNT4G NGB8207ABNT4G ON Semiconductor IGBT 365V 20A 165W D2PAK3
NGB8207ABNT4G NGB8207ABNT4G ON Semiconductor IGBT 365V 20A 165W D2PAK3
NGB8207BNT4G NGB8207BNT4G ON Semiconductor IGBT 365V 20A 165W D2PAK3
NGB8207BNT4G NGB8207BNT4G ON Semiconductor IGBT 365V 20A 165W D2PAK3
NGB8207BNT4G NGB8207BNT4G ON Semiconductor IGBT 365V 20A 165W D2PAK3
NGB8202ANT4G NGB8202ANT4G ON Semiconductor IGBT 440V 20A 150W D2PAK
NGD18N40ACLBT4G NGD18N40ACLBT4G ON Semiconductor IGBT 430V 15A 115W DPAK-3
NGD18N40ACLBT4G NGD18N40ACLBT4G ON Semiconductor IGBT 430V 15A 115W DPAK-3
NGD18N40ACLBT4G NGD18N40ACLBT4G ON Semiconductor IGBT 430V 15A 115W DPAK-3
NGB8204ANT4G NGB8204ANT4G ON Semiconductor IGBT 430V 18A 115W D2PAK3
NGB8204ANT4G NGB8204ANT4G ON Semiconductor IGBT 430V 18A 115W D2PAK3
NGB8204ANT4G NGB8204ANT4G ON Semiconductor IGBT 430V 18A 115W D2PAK3
NGB8206ANT4G NGB8206ANT4G ON Semiconductor IGBT 390V 20A 150W D2PAK3
NGTB10N60FG NGTB10N60FG ON Semiconductor IGBT 600V 10A TO220F3
NGB8206ANTF4G NGB8206ANTF4G ON Semiconductor IGBT 390V 20A 150W D2PAK3
NGTG12N60TF1G NGTG12N60TF1G ON Semiconductor IGBT 600V 24A 54W TO-3PF
NGB8206ANSL3G NGB8206ANSL3G ON Semiconductor IGBT 390V 20A 150W D2PAK3
NGTB20N120IHSWG NGTB20N120IHSWG ON Semiconductor IGBT 1200V 20A TO247
TIG056BF-1E TIG056BF-1E ON Semiconductor IGBT 150V 240A
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