中电网首页

产品索引  > 分立半导体产品 > IGBT - 单路

厂商 包装系列IGBT类型电压-集射极击穿(最大值)电流-集电极(Ic)(最大值)脉冲电流-集电极(Icm)不同Vge,Ic时的Vce(on)功率-最大值开关能量输入类型栅极电荷25°C时Td(开/关)值测试条件反向恢复时间(trr)封装/外壳安装类型供应商器件封装
1... 141142143144145146147148149150151
PDF 缩略图 器件名称 制造商 描述
STGD7NB120S-1 STGD7NB120S-1 STMicroelectronics IGBT 1200V 10A 55W IPAK
STGB7NC60HT4 STGB7NC60HT4 STMicroelectronics IGBT 600V 25A 80W D2PAK
STGD7NB120ST4 STGD7NB120ST4 STMicroelectronics IGBT 1200V 10A 55W DPAK
STGF30NC60S STGF30NC60S STMicroelectronics IGBT 600V 22A 40W TO220FP
STGFL6NC60DI STGFL6NC60DI STMicroelectronics IGBT 600V 7A 22W TO220FP
STGP10NB60SFP STGP10NB60SFP STMicroelectronics IGBT 600V 23A 25W TO220
STGWS38IH130D STGWS38IH130D STMicroelectronics IGBT 1300V 55A 180W TO247
STGB10NB60ST4 STGB10NB60ST4 STMicroelectronics IGBT 600V 29A 80W D2PAK
STGB10NB60ST4 STGB10NB60ST4 STMicroelectronics IGBT 600V 29A 80W D2PAK
STGB10NB60ST4 STGB10NB60ST4 STMicroelectronics IGBT 600V 29A 80W D2PAK
GT15J311(SM,Q) GT15J311(SM,Q) Toshiba Semiconductor and Storage IGBT 600V 15A 70W TO220SM
GT30J121(Q) GT30J121(Q) Toshiba Semiconductor and Storage IGBT 600V 30A 170W TO3PN
GT60M303(Q) GT60M303(Q) Toshiba Semiconductor and Storage IGBT 900V 60A 170W TO3P LH
GT30J324(Q) GT30J324(Q) Toshiba Semiconductor and Storage IGBT 600V 30A 170W TO3PN
GT10G131(TE12L,Q) GT10G131(TE12L,Q) Toshiba Semiconductor and Storage IGBT 400V 1W 8-SOIC
GT10J312(Q) GT10J312(Q) Toshiba Semiconductor and Storage IGBT 600V 10A 60W TO220SM
GT60N321(Q) GT60N321(Q) Toshiba Semiconductor and Storage IGBT 1000V 60A 170W TO3P LH
GT8G133(TE12L,Q) GT8G133(TE12L,Q) Toshiba Semiconductor and Storage IGBT 400V 600MW 8TSSOP
GT50J121(Q) GT50J121(Q) Toshiba Semiconductor and Storage IGBT 600V 50A 240W TO3P LH
1... 141142143144145146147148149150151