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厂商 包装系列IGBT类型电压-集射极击穿(最大值)电流-集电极(Ic)(最大值)脉冲电流-集电极(Icm)不同Vge,Ic时的Vce(on)功率-最大值开关能量输入类型栅极电荷25°C时Td(开/关)值测试条件反向恢复时间(trr)封装/外壳安装类型供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
STGWT40H60DLFB STGWT40H60DLFB STMicroelectronics IGBT 600V 80A 283W TO3P-3L
STGB20V60F STGB20V60F STMicroelectronics IGBT 600V 40A 167W D2PAK
STGB20V60F STGB20V60F STMicroelectronics IGBT 600V 40A 167W D2PAK
STGB20V60F STGB20V60F STMicroelectronics IGBT 600V 40A 167W D2PAK
STGWT30V60F STGWT30V60F STMicroelectronics IGBT 600V 60A 260W TO3PF
STGWT20H60DF STGWT20H60DF STMicroelectronics IGBT 600V 40A 167W TO3PF
STGFW20V60DF STGFW20V60DF STMicroelectronics IGBT 600V 40A 52W TO-3PF
STGW30H60DLFB STGW30H60DLFB STMicroelectronics IGBT HB 600V 30A HS TO247
STGFW30V60F STGFW30V60F STMicroelectronics IGBT 600V 60A 58W TO3PF
STGWT30H65FB STGWT30H65FB STMicroelectronics IGBT 650V 30A 260W TO3PL
STGW30H60DFB STGW30H60DFB STMicroelectronics IGBT 600V 60A 260W TO247
STGWT30H60DFB STGWT30H60DFB STMicroelectronics IGBT 600V 60A 260W TO3PL
STGWT60H65FB STGWT60H65FB STMicroelectronics IGBT 650V 80A 375W TO3P-3L
STGB30V60DF STGB30V60DF STMicroelectronics IGBT 600V 60A 258W D2PAK
STGB30V60DF STGB30V60DF STMicroelectronics IGBT 600V 60A 258W D2PAK
STGB30V60DF STGB30V60DF STMicroelectronics IGBT 600V 60A 258W D2PAK
STGWT60H65DFB STGWT60H65DFB STMicroelectronics IGBT 650V 80A 375W TO3P-3L
STGW20IH125DF STGW20IH125DF STMicroelectronics IGBT 1250V 40A 259W TO-247
STGWT20IH125DF STGWT20IH125DF STMicroelectronics IGBT 1250V 40A 259W TO-3P
STGFW30V60DF STGFW30V60DF STMicroelectronics IGBT 600V 60A 58W TO-3PF
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