中电网首页

产品索引  > 分立半导体产品 > JFET(结点场效应

厂商 包装系列FET类型电压-击穿(V(BR)GSS)漏源极电压(Vdss)不同Vds(Vgs=0)时的电流-漏极(Idss)漏极电流(Id)-最大值不同Id时的电压-截止(VGS关)不同Vds时的输入电容(Ciss)电阻-RDS(开)安装类型封装/外壳供应商器件封装功率-最大值
1... 1516171819202122232425 39
PDF 缩略图 器件名称 制造商 描述
J174,126 J174,126 NXP Semiconductors JFET P-CH 30V 400MW TO92-3
J176,126 J176,126 NXP Semiconductors JFET P-CH 30V 400MW TO92-3
J108,126 J108,126 NXP Semiconductors JFET N-CH 25V 0.4W SOT54
J110,126 J110,126 NXP Semiconductors JFET N-CH 25V 0.4W SOT54
PMBFJ113,215 PMBFJ113,215 NXP Semiconductors JFET N-CH 40V 0.3W SOT23
PMBFJ113,215 PMBFJ113,215 NXP Semiconductors JFET N-CH 40V 0.3W SOT23
PMBFJ113,215 PMBFJ113,215 NXP Semiconductors JFET N-CH 40V 0.3W SOT23
MMBF4393LT1G MMBF4393LT1G ON Semiconductor JFET N-CH 30V 0.225W SOT23
MMBF4393LT1G MMBF4393LT1G ON Semiconductor JFET N-CH 30V 0.225W SOT23
MMBF4393LT1G MMBF4393LT1G ON Semiconductor JFET N-CH 30V 0.225W SOT23
MMBFJ177LT1G MMBFJ177LT1G ON Semiconductor JFET P-CH 30V 0.225W SOT23
MMBFJ177LT1G MMBFJ177LT1G ON Semiconductor JFET P-CH 30V 0.225W SOT23
MMBFJ177LT1G MMBFJ177LT1G ON Semiconductor JFET P-CH 30V 0.225W SOT23
MMBF4391LT1G MMBF4391LT1G ON Semiconductor JFET N-CH 30V 0.225W SOT23
MMBF4391LT1G MMBF4391LT1G ON Semiconductor JFET N-CH 30V 0.225W SOT23
MMBF4391LT1G MMBF4391LT1G ON Semiconductor JFET N-CH 30V 0.225W SOT23
MMBF4392LT1G MMBF4392LT1G ON Semiconductor JFET N-CH 30V 0.225W SOT23
MMBF4392LT1G MMBF4392LT1G ON Semiconductor JFET N-CH 30V 0.225W SOT23
MMBF4392LT1G MMBF4392LT1G ON Semiconductor JFET N-CH 30V 0.225W SOT23
MMBFU310LT1G MMBFU310LT1G ON Semiconductor JFET N-CH 25V 0.225W SOT23
1... 1516171819202122232425 39