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厂商 包装系列FET类型电压-击穿(V(BR)GSS)漏源极电压(Vdss)不同Vds(Vgs=0)时的电流-漏极(Idss)漏极电流(Id)-最大值不同Id时的电压-截止(VGS关)不同Vds时的输入电容(Ciss)电阻-RDS(开)安装类型封装/外壳供应商器件封装功率-最大值
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PDF 缩略图 器件名称 制造商 描述
MMBFU310LT1G MMBFU310LT1G ON Semiconductor JFET N-CH 25V 0.225W SOT23
MMBFU310LT1G MMBFU310LT1G ON Semiconductor JFET N-CH 25V 0.225W SOT23
MMBFJ175LT1G MMBFJ175LT1G ON Semiconductor JFET P-CH 30V 0.225W SOT23
MMBFJ175LT1G MMBFJ175LT1G ON Semiconductor JFET P-CH 30V 0.225W SOT23
MMBFJ175LT1G MMBFJ175LT1G ON Semiconductor JFET P-CH 30V 0.225W SOT23
2SK3666-3-TB-E 2SK3666-3-TB-E ON Semiconductor JFET N-CH 10MA 200MW 3CP
2SK3666-3-TB-E 2SK3666-3-TB-E ON Semiconductor JFET N-CH 10MA 200MW 3CP
2SK3666-3-TB-E 2SK3666-3-TB-E ON Semiconductor JFET N-CH 10MA 200MW 3CP
TF252TH-5-TL-H TF252TH-5-TL-H ON Semiconductor JFET N-CH 0.1W 3VTFP
TF252TH-5-TL-H TF252TH-5-TL-H ON Semiconductor JFET N-CH 0.1W 3VTFP
TF252TH-5-TL-H TF252TH-5-TL-H ON Semiconductor JFET N-CH 0.1W 3VTFP
TF412ST5G TF412ST5G ON Semiconductor JFET N-CH 30V 0.1W SOT-883 XDFN3
TF412ST5G TF412ST5G ON Semiconductor JFET N-CH 30V 0.1W SOT-883 XDFN3
TF412ST5G TF412ST5G ON Semiconductor JFET N-CH 30V 0.1W SOT-883 XDFN3
2SK932-24-TB-E 2SK932-24-TB-E ON Semiconductor JFET N-CH 50MA 200MW CP
2SK932-24-TB-E 2SK932-24-TB-E ON Semiconductor JFET N-CH 50MA 200MW CP
2SK932-24-TB-E 2SK932-24-TB-E ON Semiconductor JFET N-CH 50MA 200MW CP
2SK932-23-TB-E 2SK932-23-TB-E ON Semiconductor JFET N-CH 50MA 200MW CP
2SK932-23-TB-E 2SK932-23-TB-E ON Semiconductor JFET N-CH 50MA 200MW CP
2SK932-23-TB-E 2SK932-23-TB-E ON Semiconductor JFET N-CH 50MA 200MW CP
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