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厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BLF4G20LS-110B,112 BLF4G20LS-110B,112 NXP Semiconductors BASESTATION FINAL 2GHZ SOT502B
BLF4G20LS-130,112 BLF4G20LS-130,112 NXP Semiconductors BASESTATION FINAL 2GHZ SOT502B
BLF4G20S-110B,112 BLF4G20S-110B,112 NXP Semiconductors BASESTATION FINAL 2GHZ SOT502B
BLF4G22LS-130,112 BLF4G22LS-130,112 NXP Semiconductors BASESTATION FINAL 2.2GHZ SOT502B
BLF4G22S-100,112 BLF4G22S-100,112 NXP Semiconductors BASESTATION FINAL 2.2GHZ SOT502B
BLF546,112 BLF546,112 NXP Semiconductors TRANSISTOR RF DMOS SOT268A
BF245A,112 BF245A,112 NXP Semiconductors JFET N-CH 30V 6.5MA TO92-3
BF245B,112 BF245B,112 NXP Semiconductors JFET N-CH 30V 25MA TO-92
BF245B,126 BF245B,126 NXP Semiconductors JFET N-CH 30V 25MA TO-92
BF245C,112 BF245C,112 NXP Semiconductors JFET N-CH 30V 25MA TO-92
BF904AWR,115 BF904AWR,115 NXP Semiconductors MOSFET N-CH 7V 30MA SOT143R
BF909AWR,115 BF909AWR,115 NXP Semiconductors MOSFET N-CH 7V 40MA SOT143R
BLF1820-90,112 BLF1820-90,112 NXP Semiconductors TRANSISTOR RF LDMOS SOT502A
BLF4G10-160,112 BLF4G10-160,112 NXP Semiconductors TRANSISTOR RF LDMOS SOT502A
BLF6G10LS-200,112 BLF6G10LS-200,112 NXP Semiconductors IC BASESTATION FINAL SOT502B
BLF6G10LS-200,118 BLF6G10LS-200,118 NXP Semiconductors IC BASESTATION FINAL SOT502B
BLF6G27LS-135,112 BLF6G27LS-135,112 NXP Semiconductors IC WIMAX 2.7GHZ SOT502B
BLF6G20-230P BLF6G20-230P NXP Semiconductors IC BASESTATION FINAL SOT502A
BLA1011-200R,112 BLA1011-200R,112 NXP Semiconductors TRANS LDMOS NCH 75V SOT502A
BLA1011S-200R,112 BLA1011S-200R,112 NXP Semiconductors TRANS LDMOS NCH 75V SOT502B
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