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厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
PD57060STR-E PD57060STR-E STMicroelectronics IC TRANS RF PWR LDMOST PWRSO-10
PD57070S PD57070S STMicroelectronics IC TRANS RF PWR LDMOST PWRSO-10
SD2931 SD2931 STMicroelectronics IC TRANS RF PWR HF/VHF/UHF M244
SD2932B SD2932B STMicroelectronics IC TRANS RF PWR HF/VHF/UHF M244
PD20015S-E PD20015S-E STMicroelectronics TRANS RF N-CH FET POWERSO-10RF
PD54003S-E PD54003S-E STMicroelectronics TRANS RF N-CH FET POWERSO-10RF
PD85035TR-E PD85035TR-E STMicroelectronics TRANS RF N-CH FET POWERSO-10RF
PD84008S-E PD84008S-E STMicroelectronics TRANS RF N-CH FET POWERSO-10RF
STAC2942B STAC2942B STMicroelectronics TRANS RF PWR N-CH 350W STAC244B
SD2933-03 SD2933-03 STMicroelectronics TRANS RF N-CH HF/VHF/UHF M177
3SK293(TE85L,F) 3SK293(TE85L,F) Toshiba Semiconductor and Storage MOSF N CH 12.5V 30MA USQ
3SK293(TE85L,F) 3SK293(TE85L,F) Toshiba Semiconductor and Storage MOSF N CH 12.5V 30MA USQ
3SK293(TE85L,F) 3SK293(TE85L,F) Toshiba Semiconductor and Storage MOSF N CH 12.5V 30MA USQ
2SK209-BL(TE85L,F) 2SK209-BL(TE85L,F) Toshiba Semiconductor and Storage MOSFET N-CH S-MINI FET
2SK209-BL(TE85L,F) 2SK209-BL(TE85L,F) Toshiba Semiconductor and Storage MOSFET N-CH S-MINI FET
2SK209-BL(TE85L,F) 2SK209-BL(TE85L,F) Toshiba Semiconductor and Storage MOSFET N-CH S-MINI FET
2SK209-GR(TE85L,F) 2SK209-GR(TE85L,F) Toshiba Semiconductor and Storage MOSFET N-CH S-MINI FET
2SK209-GR(TE85L,F) 2SK209-GR(TE85L,F) Toshiba Semiconductor and Storage MOSFET N-CH S-MINI FET
2SK209-GR(TE85L,F) 2SK209-GR(TE85L,F) Toshiba Semiconductor and Storage MOSFET N-CH S-MINI FET
2SK209-Y(TE85L,F) 2SK209-Y(TE85L,F) Toshiba Semiconductor and Storage MOSFET N-CH S-MINI FET
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