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厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
RFM08U9X(TE12L,Q) RFM08U9X(TE12L,Q) Toshiba Semiconductor and Storage MOSFET N-CH PW-X
RFM08U9X(TE12L,Q) RFM08U9X(TE12L,Q) Toshiba Semiconductor and Storage MOSFET N-CH PW-X
RFM08U9X(TE12L,Q) RFM08U9X(TE12L,Q) Toshiba Semiconductor and Storage MOSFET N-CH PW-X
RFM12U7X(TE12L,Q) RFM12U7X(TE12L,Q) Toshiba Semiconductor and Storage MOSFET N-CH PW-X
RFM12U7X(TE12L,Q) RFM12U7X(TE12L,Q) Toshiba Semiconductor and Storage MOSFET N-CH PW-X
RFM12U7X(TE12L,Q) RFM12U7X(TE12L,Q) Toshiba Semiconductor and Storage MOSFET N-CH PW-X
RFM00U7U(TE85L,F) RFM00U7U(TE85L,F) Toshiba Semiconductor and Storage FET RF N-CH 20V 520MHZ USQ
RFM00U7U(TE85L,F) RFM00U7U(TE85L,F) Toshiba Semiconductor and Storage FET RF N-CH 20V 520MHZ USQ
RFM00U7U(TE85L,F) RFM00U7U(TE85L,F) Toshiba Semiconductor and Storage FET RF N-CH 20V 520MHZ USQ
2SK3078A(TE12L,F) 2SK3078A(TE12L,F) Toshiba Semiconductor and Storage FET RF N-CH 10V 470 MHZ PW-MINI
2SK3078A(TE12L,F) 2SK3078A(TE12L,F) Toshiba Semiconductor and Storage FET RF N-CH 10V 470 MHZ PW-MINI
2SK3078A(TE12L,F) 2SK3078A(TE12L,F) Toshiba Semiconductor and Storage FET RF N-CH 10V 470 MHZ PW-MINI
2SK3074TE12LF 2SK3074TE12LF Toshiba Semiconductor and Storage MOSF RF N CH 30V 1A PW-MINI
2SK3074TE12LF 2SK3074TE12LF Toshiba Semiconductor and Storage MOSF RF N CH 30V 1A PW-MINI
2SK3074TE12LF 2SK3074TE12LF Toshiba Semiconductor and Storage MOSF RF N CH 30V 1A PW-MINI
RFM04U6P(TE12L,F) RFM04U6P(TE12L,F) Toshiba Semiconductor and Storage MOSFET N-CH PW-MINI
RFM04U6P(TE12L,F) RFM04U6P(TE12L,F) Toshiba Semiconductor and Storage MOSFET N-CH PW-MINI
RFM04U6P(TE12L,F) RFM04U6P(TE12L,F) Toshiba Semiconductor and Storage MOSFET N-CH PW-MINI
2SK3476(TE12L,Q) 2SK3476(TE12L,Q) Toshiba Semiconductor and Storage MOSF RF N CH 20V 3A PW-X
2SK3476(TE12L,Q) 2SK3476(TE12L,Q) Toshiba Semiconductor and Storage MOSF RF N CH 20V 3A PW-X
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