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厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
MWT-1789SB MWT-1789SB Microwave Technology Inc MESFET0.5-4GHZ SOT-89
MWT-1789SB MWT-1789SB Microwave Technology Inc MESFET0.5-4GHZ SOT-89
MWT-173 MWT-173 Microwave Technology Inc MESFET GAAS 500MHZ PKG 73
MWT-173 MWT-173 Microwave Technology Inc MESFET GAAS 500MHZ PKG 73
MWT-173 MWT-173 Microwave Technology Inc MESFET GAAS 500MHZ PKG 73
MWT-A973 MWT-A973 Microwave Technology Inc MESFET GAAS 18GHZ PKG 73
MWT-A973 MWT-A973 Microwave Technology Inc MESFET GAAS 18GHZ PKG 73
MWT-A973 MWT-A973 Microwave Technology Inc MESFET GAAS 18GHZ PKG 73
BF862,215 BF862,215 NXP Semiconductors JFET N-CHAN 20V SOT-23
BF862,235 BF862,235 NXP Semiconductors JFET N-CH 20V 25MA SOT23
BF862,215 BF862,215 NXP Semiconductors JFET N-CHAN 20V SOT-23
BF862,215 BF862,215 NXP Semiconductors JFET N-CHAN 20V SOT-23
BLF6G21-10G,135 BLF6G21-10G,135 NXP Semiconductors TRANSISTOR PWR LDMOS SOT538
BLF6G21-10G,112 BLF6G21-10G,112 NXP Semiconductors TRANSISTOR PWR LDMOS SOT538A
BLF6G27-10G,118 BLF6G27-10G,118 NXP Semiconductors TRANS LDMOS SOT975C
BLF6G27-10G,112 BLF6G27-10G,112 NXP Semiconductors IC WIMAX 2.7GHZ 2-LDMOST
BLF642,112 BLF642,112 NXP Semiconductors TRANS LDMOS SOT467C
BLF571,112 BLF571,112 NXP Semiconductors TRANSISTOR RF LDMOS SOT467C
BLF881,112 BLF881,112 NXP Semiconductors TRANSISTOR PWR UHF LDMOS SOT467C
BLF871,112 BLF871,112 NXP Semiconductors TRANSISTOR RF LDMOS SOT467C
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