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厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BF1107,215 BF1107,215 NXP Semiconductors MOSFET N-CH 3V 10MA SOT23
BF556A,215 BF556A,215 NXP Semiconductors JFET N-CH 30V 7MA SOT23
BF556A,235 BF556A,235 NXP Semiconductors JFET N-CH 30V 7MA SOT23
BF556A,215 BF556A,215 NXP Semiconductors JFET N-CH 30V 7MA SOT23
BF556A,215 BF556A,215 NXP Semiconductors JFET N-CH 30V 7MA SOT23
BLF7G22L-200,118 BLF7G22L-200,118 NXP Semiconductors TRANSISTOR PWR LDMOS SOT502
BLF8G10LS-160,118 BLF8G10LS-160,118 NXP Semiconductors TRANSISTOR LDMOST
BLF8G10LS-160,118 BLF8G10LS-160,118 NXP Semiconductors TRANSISTOR RF LDMOST
BLF8G10LS-160,118 BLF8G10LS-160,118 NXP Semiconductors TRANSISTOR RF LDMOST
BLF6G20LS-110,118 BLF6G20LS-110,118 NXP Semiconductors IC BASESTATION FINAL SOT502B
BLF6G20LS-110,112 BLF6G20LS-110,112 NXP Semiconductors IC BASESTATION FINAL SOT502B
BLF6G22LS-100,112 BLF6G22LS-100,112 NXP Semiconductors TRANS BASESTATION 2-LDMOST
BLF6G10LS-160RN,11 BLF6G10LS-160RN,11 NXP Semiconductors TRANS LDMOS POWER 160W SOT-502B
BLF7G22L-200,118 BLF7G22L-200,118 NXP Semiconductors TRANSISTOR RF PWR LDMOS SOT502
BLF7G22L-200,118 BLF7G22L-200,118 NXP Semiconductors TRANSISTOR RF PWR LDMOS SOT502
BLF7G20LS-200,118 BLF7G20LS-200,118 NXP Semiconductors TRANSISTOR PWR LDMOS SOT502
BLF7G20LS-200,118 BLF7G20LS-200,118 NXP Semiconductors TRANSISTOR RF PWR LDMOS SOT502
BLF7G20LS-200,118 BLF7G20LS-200,118 NXP Semiconductors TRANSISTOR RF PWR LDMOS SOT502
BLF6G38-100,112 BLF6G38-100,112 NXP Semiconductors TRANS WIMAX PWR LDMOS SOT502A
BLF871S,112 BLF871S,112 NXP Semiconductors TRANSISTOR RF PWR LDMOS SOT467B
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