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厂商 包装系列晶体管类型电压-集射极击穿(最大值)频率增益频率-跃迁噪声系数(dB,不同f时的典型值)电压-测试额定电流功率-最大值噪声系数不同Ic,Vce时的DC电流增益(hFE)(最小值)电流-测试功率-输出电流-集电极(Ic)(最大值)安装类型电压-额定封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BLF2425M7LS250P,11 BLF2425M7LS250P,11 NXP Semiconductors TRANSISTOR RF POWER LDMOST
BLF647PS,112 BLF647PS,112 NXP Semiconductors TRANSISTOR BROADBAND LDMOS ACC4L
BLL8H1214LS-250U BLL8H1214LS-250U NXP Semiconductors TRANS L-BAND LDMOS 250W SOT502B
BLL8H1214L-250U BLL8H1214L-250U NXP Semiconductors TRANS L-BAND LDMOS 250W SOT502A
BLL8H1214L-500U BLL8H1214L-500U NXP Semiconductors TRANS L-BAND LDMOS 500W SOT539A
BLL8H1214LS-500U BLL8H1214LS-500U NXP Semiconductors TRANS L-BAND LDMOS 500W SOT539B
BLF6G10S-45,112 BLF6G10S-45,112 NXP Semiconductors IC BASESTATION DRIVER SOT608B
BLF6G20S-45,112 BLF6G20S-45,112 NXP Semiconductors TRANSISTOR POWER LDMOS SOT608B
BLF6G38-25,112 BLF6G38-25,112 NXP Semiconductors IC WIMAX 3.8GHZ SOT608A
BLF6G20LS-75,112 BLF6G20LS-75,112 NXP Semiconductors IC BASESTATION FINAL SOT502B
BLD6G21LS-50,112 BLD6G21LS-50,112 NXP Semiconductors TRANSISTOR DOHERTY W-CDMA SOT113
BLF645,112 BLF645,112 NXP Semiconductors TRANSISTOR PWR LDMOS SOT540A
BLF884P,112 BLF884P,112 NXP Semiconductors TRANSISTOR PWR CDFM4
BLL6H1214-500,112 BLL6H1214-500,112 NXP Semiconductors TRANS L-BAND RADAR LDMOS SOT539A
BLF184GQ BLF184GQ NXP Semiconductors IC TRANS LDMOS 650W SOT1214A
BLL8H0514-25U BLL8H0514-25U NXP Semiconductors TRANS L-BAND LDMOS 25W SOT467C
BLL8H0514LS-130U BLL8H0514LS-130U NXP Semiconductors TRANS L-BAND LDMOS 130W SOT1135B
ON5520,215 ON5520,215 NXP Semiconductors MOSFET RF SOT23 TO-236AB
ON5258,215 ON5258,215 NXP Semiconductors MOSFET RF SOT23 TO-236AB
BF908R,235 BF908R,235 NXP Semiconductors MOSFET DUAL GATE 12V 40MA SOT143
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