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厂商 包装系列晶体管类型电流-集电极(Ic)(最大值)电压-集射极击穿(最大值)电阻器-基底(R1)(欧姆)电阻器-发射极基底(R2)(欧姆)不同Ic,Vce时的DC电流增益(hFE)(最小值)不同Ib,Ic时的Vce饱和值(最大值)电流-集电极截止(最大值)频率-跃迁功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
RN1313(TE85L,F) RN1313(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.15W USM
RN2309(TE85L,F) RN2309(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
RN2309(TE85L,F) RN2309(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
RN2309(TE85L,F) RN2309(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
RN2314(TE85L,F) RN2314(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
RN2314(TE85L,F) RN2314(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
RN2314(TE85L,F) RN2314(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
RN2307(TE85L,F) RN2307(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
RN2307(TE85L,F) RN2307(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
RN2307(TE85L,F) RN2307(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
RN1318(TE85L,F) RN1318(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W USM
RN1318(TE85L,F) RN1318(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W USM
RN1318(TE85L,F) RN1318(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W USM
RN2103(T5L,F,T) RN2103(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2103(T5L,F,T) RN2103(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2103(T5L,F,T) RN2103(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2106(T5L,F,T) RN2106(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2106(T5L,F,T) RN2106(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2106(T5L,F,T) RN2106(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2104(T5L,F,T) RN2104(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
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