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厂商 包装系列晶体管类型电流-集电极(Ic)(最大值)电压-集射极击穿(最大值)电阻器-基底(R1)(欧姆)电阻器-发射极基底(R2)(欧姆)不同Ic,Vce时的DC电流增益(hFE)(最小值)不同Ib,Ic时的Vce饱和值(最大值)电流-集电极截止(最大值)频率-跃迁功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
RN2305(TE85L,F) RN2305(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
RN2305(TE85L,F) RN2305(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
RN2305(TE85L,F) RN2305(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
RN2102,LF(CT RN2102,LF(CT Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2102,LF(CT RN2102,LF(CT Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2102,LF(CT RN2102,LF(CT Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN1409,LF(B RN1409,LF(B Toshiba Semiconductor and Storage TRANS PREBIAS NPN 50V 0.2W SMINI
RN1409,LF(B RN1409,LF(B Toshiba Semiconductor and Storage TRANS PREBIAS NPN 50V 0.2W SMINI
RN1409,LF(B RN1409,LF(B Toshiba Semiconductor and Storage TRANS PREBIAS NPN 50V 0.2W SMINI
RN2108(T5L,F,T) RN2108(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2108(T5L,F,T) RN2108(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2108(T5L,F,T) RN2108(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN1111(TE85L,F) RN1111(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W SSM
RN1111(TE85L,F) RN1111(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W SSM
RN1111(TE85L,F) RN1111(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W SSM
RN2114(TE85L,F) RN2114(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2114(TE85L,F) RN2114(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2114(TE85L,F) RN2114(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN1414,LF(B RN1414,LF(B Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.2W S-MINI
RN1414,LF(B RN1414,LF(B Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.2W S-MINI
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