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厂商 包装系列晶体管类型电流-集电极(Ic)(最大值)电压-集射极击穿(最大值)电阻器-基底(R1)(欧姆)电阻器-发射极基底(R2)(欧姆)不同Ic,Vce时的DC电流增益(hFE)(最小值)不同Ib,Ic时的Vce饱和值(最大值)电流-集电极截止(最大值)频率-跃迁功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
RN2101(T5L,F,T) RN2101(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2101(T5L,F,T) RN2101(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN1104T5LFT RN1104T5LFT Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W SSM
RN1104T5LFT RN1104T5LFT Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W SSM
RN1104T5LFT RN1104T5LFT Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W SSM
RN1317(TE85L,F) RN1317(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W USM
RN1317(TE85L,F) RN1317(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W USM
RN1317(TE85L,F) RN1317(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W USM
RN1130MFV(TL3,T) RN1130MFV(TL3,T) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.15W VESM
RN1130MFV(TL3,T) RN1130MFV(TL3,T) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.15W VESM
RN1130MFV(TL3,T) RN1130MFV(TL3,T) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.15W VESM
RN1110MFV(TL3,T) RN1110MFV(TL3,T) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.15W VESM
RN1110MFV(TL3,T) RN1110MFV(TL3,T) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.15W VESM
RN1110MFV(TL3,T) RN1110MFV(TL3,T) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.15W VESM
RN1105,LF(CT RN1105,LF(CT Toshiba Semiconductor and Storage TRANS PREBIAS NPN 50V 0.1W SSM
RN1105,LF(CT RN1105,LF(CT Toshiba Semiconductor and Storage TRANS PREBIAS NPN 50V 0.1W SSM
RN1105,LF(CT RN1105,LF(CT Toshiba Semiconductor and Storage TRANS PREBIAS NPN 50V 0.1W SSM
RN1416,LF RN1416,LF Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.2W S-MINI
RN1416,LF RN1416,LF Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.2W S-MINI
RN1416,LF RN1416,LF Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.2W S-MINI
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