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厂商 包装系列晶体管类型电流-集电极(Ic)(最大值)电压-集射极击穿(最大值)电阻器-基底(R1)(欧姆)电阻器-发射极基底(R2)(欧姆)不同Ic,Vce时的DC电流增益(hFE)(最小值)不同Ib,Ic时的Vce饱和值(最大值)电流-集电极截止(最大值)频率-跃迁功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
RN1108CT(TPL3) RN1108CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1108CT(TPL3) RN1108CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1109CT(TPL3) RN1109CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1109CT(TPL3) RN1109CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1109CT(TPL3) RN1109CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1110CT(TPL3) RN1110CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1110CT(TPL3) RN1110CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1110CT(TPL3) RN1110CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1111CT(TPL3) RN1111CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1111CT(TPL3) RN1111CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1111CT(TPL3) RN1111CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1112CT(TPL3) RN1112CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1112CT(TPL3) RN1112CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1112CT(TPL3) RN1112CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1113CT(TPL3) RN1113CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1113CT(TPL3) RN1113CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1113CT(TPL3) RN1113CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN2101CT(TPL3) RN2101CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.05W CST3
RN2101CT(TPL3) RN2101CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.05W CST3
RN2101CT(TPL3) RN2101CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.05W CST3
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