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厂商 包装系列晶体管类型电流-集电极(Ic)(最大值)电压-集射极击穿(最大值)电阻器-基底(R1)(欧姆)电阻器-发射极基底(R2)(欧姆)不同Ic,Vce时的DC电流增益(hFE)(最小值)不同Ib,Ic时的Vce饱和值(最大值)电流-集电极截止(最大值)频率-跃迁功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
RN1307(TE85L,F) RN1307(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 100MW USM
RN1311(TE85L,F) RN1311(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 100MW USM
RN1315(TE85L,F) RN1315(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 100MW USM
RN1407T5LFT RN1407T5LFT Toshiba Semiconductor and Storage TRANS PREBIAS NPN 200MW SMINI
RN2302(TE85L,F) RN2302(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 100MW USM
RN2310(TE85L,F) RN2310(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
RN2310(TE85L,F) RN2310(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
RN2310(TE85L,F) RN2310(TE85L,F) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W USM
RN2105(T5L,F,T) RN2105(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2105(T5L,F,T) RN2105(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2105(T5L,F,T) RN2105(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2109(T5L,F,T) RN2109(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2109(T5L,F,T) RN2109(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2109(T5L,F,T) RN2109(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2112,LF(CB RN2112,LF(CB Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2113(T5L,F,T) RN2113(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2113(T5L,F,T) RN2113(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN2113(T5L,F,T) RN2113(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
RN1101CT(TPL3) RN1101CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
RN1101CT(TPL3) RN1101CT(TPL3) Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.05W CST3
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