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厂商 包装系列晶体管类型电流-集电极(Ic)(最大值)电压-集射极击穿(最大值)不同Ib,Ic时的Vce饱和值(最大值)电流-集电极截止(最大值)不同Ic,Vce时的DC电流增益(hFE)(最小值)功率-最大值频率-跃迁安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
HN4C51J(TE85L,F) HN4C51J(TE85L,F) Toshiba Semiconductor and Storage TRANS 2NPN 120V 0.1A SMV
HN4C51J(TE85L,F) HN4C51J(TE85L,F) Toshiba Semiconductor and Storage TRANS 2NPN 120V 0.1A SMV
HN4C51J(TE85L,F) HN4C51J(TE85L,F) Toshiba Semiconductor and Storage TRANS 2NPN 120V 0.1A SMV
HN3C51F-GR(TE85L,F HN3C51F-GR(TE85L,F Toshiba Semiconductor and Storage TRANS 2NPN 120V 0.1A SM6
HN3C51F-GR(TE85L,F HN3C51F-GR(TE85L,F Toshiba Semiconductor and Storage TRANS 2NPN 120V 0.1A SM6
HN3C51F-GR(TE85L,F HN3C51F-GR(TE85L,F Toshiba Semiconductor and Storage TRANS 2NPN 120V 0.1A SM6
HN3A51F(TE85L,F) HN3A51F(TE85L,F) Toshiba Semiconductor and Storage TRANS 2PNP 120V 0.1A SM6
HN3A51F(TE85L,F) HN3A51F(TE85L,F) Toshiba Semiconductor and Storage TRANS 2PNP 120V 0.1A SM6
HN3A51F(TE85L,F) HN3A51F(TE85L,F) Toshiba Semiconductor and Storage TRANS 2PNP 120V 0.1A SM6
HN1C03F-B(TE85L,F) HN1C03F-B(TE85L,F) Toshiba Semiconductor and Storage TRANS 2NPN 20V 0.3A SM6
HN1C03F-B(TE85L,F) HN1C03F-B(TE85L,F) Toshiba Semiconductor and Storage TRANS 2NPN 20V 0.3A SM6
HN1C03F-B(TE85L,F) HN1C03F-B(TE85L,F) Toshiba Semiconductor and Storage TRANS 2NPN 20V 0.3A SM6
HN1A01FUGRLFT HN1A01FUGRLFT Toshiba Semiconductor and Storage TRANS 2PNP 50V 0.15A US6-PLN
HN1A01FUGRLFT HN1A01FUGRLFT Toshiba Semiconductor and Storage TRANS 2PNP 50V 0.15A US6-PLN
HN1A01FUGRLFT HN1A01FUGRLFT Toshiba Semiconductor and Storage TRANS 2PNP 50V 0.15A US6-PLN
2SC4944-Y(TE85L,F) 2SC4944-Y(TE85L,F) Toshiba Semiconductor and Storage TRANS 2NPN 50V 0.15A USV
2SC4944-Y(TE85L,F) 2SC4944-Y(TE85L,F) Toshiba Semiconductor and Storage TRANS 2NPN 50V 0.15A USV
2SC4944-Y(TE85L,F) 2SC4944-Y(TE85L,F) Toshiba Semiconductor and Storage TRANS 2NPN 50V 0.15A USV
HN1A01FU-Y,LF HN1A01FU-Y,LF Toshiba Semiconductor and Storage TRANS 2PNP 50V 0.15A US6
HN1A01FU-Y,LF HN1A01FU-Y,LF Toshiba Semiconductor and Storage TRANS 2PNP 50V 0.15A US6
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