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厂商 包装系列晶体管类型电流-集电极(Ic)(最大值)电压-集射极击穿(最大值)不同Ib,Ic时的Vce饱和值(最大值)电流-集电极截止(最大值)不同Ic,Vce时的DC电流增益(hFE)(最小值)功率-最大值频率-跃迁安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SN75468NSRG4 SN75468NSRG4 Texas Instruments TRANS 7NPN DARL 100V 0.5A 16SO
ULN2803AN ULN2803AN Texas Instruments TRANS 8NPN DARL 50V 0.5A 18DIP
ULN2803ANE4 ULN2803ANE4 Texas Instruments TRANS 8NPN DARL 50V 0.5A 18DIP
LM394CH/NOPB LM394CH/NOPB Texas Instruments TRANS 2NPN 20V 0.02A TO99-6
ULN2004AINS ULN2004AINS Texas Instruments TRANS 7NPN DARL 50V 0.5A 16SO
ULN2004AINSE4 ULN2004AINSE4 Texas Instruments TRANS 7NPN DARL 50V 0.5A 16SO
ULN2004AINSG4 ULN2004AINSG4 Texas Instruments TRANS 7NPN DARL 50V 0.5A 16SO
ULN2803AFWG,C,EL ULN2803AFWG,C,EL Toshiba Semiconductor and Storage TRANS 8NPN DARL 50V 0.5A 18SOL
ULN2803AFWG,C,EL ULN2803AFWG,C,EL Toshiba Semiconductor and Storage TRANS 8NPN DARL 50V 0.5A 18SOL
ULN2803AFWG,C,EL ULN2803AFWG,C,EL Toshiba Semiconductor and Storage TRANS 8NPN DARL 50V 0.5A 18SOL
ULN2003APG,CN ULN2003APG,CN Toshiba Semiconductor and Storage TRANS 7NPN DARL 50V 0.5A 16DIP
HN1B04FE-Y,LF HN1B04FE-Y,LF Toshiba Semiconductor and Storage TRANS NPN/PNP 50V 0.15A ES6
HN1B04FE-Y,LF HN1B04FE-Y,LF Toshiba Semiconductor and Storage TRANS NPN/PNP 50V 0.15A ES6
HN1B04FE-Y,LF HN1B04FE-Y,LF Toshiba Semiconductor and Storage TRANS NPN/PNP 50V 0.15A ES6
2SC4207-GR(TE85L,F 2SC4207-GR(TE85L,F Toshiba Semiconductor and Storage TRANS 2NPN 50V 0.15A SMV
2SC4207-GR(TE85L,F 2SC4207-GR(TE85L,F Toshiba Semiconductor and Storage TRANS 2NPN 50V 0.15A SMV
2SC4207-GR(TE85L,F 2SC4207-GR(TE85L,F Toshiba Semiconductor and Storage TRANS 2NPN 50V 0.15A SMV
2SC4207-Y(TE85L,F) 2SC4207-Y(TE85L,F) Toshiba Semiconductor and Storage TRANS 2NPN 50V 0.15A SMV
2SC4207-Y(TE85L,F) 2SC4207-Y(TE85L,F) Toshiba Semiconductor and Storage TRANS 2NPN 50V 0.15A SMV
2SC4207-Y(TE85L,F) 2SC4207-Y(TE85L,F) Toshiba Semiconductor and Storage TRANS 2NPN 50V 0.15A SMV
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