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厂商 包装系列晶体管类型电流-集电极(Ic)(最大值)电压-集射极击穿(最大值)电阻器-基底(R1)(欧姆)电阻器-发射极基底(R2)(欧姆)不同Ic,Vce时的DC电流增益(hFE)(最小值)不同Ib,Ic时的Vce饱和值(最大值)电流-集电极截止(最大值)频率-跃迁功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
PBLS4002V,115 PBLS4002V,115 NXP Semiconductors TRANS NPN PREBIAS/PNP SOT666
PBLS4004V,115 PBLS4004V,115 NXP Semiconductors TRANS NPN PREBIAS/PNP SOT666
PBLS4004V,115 PBLS4004V,115 NXP Semiconductors TRANS NPN PREBIAS/PNP SOT666
PBLS4004V,115 PBLS4004V,115 NXP Semiconductors TRANS NPN PREBIAS/PNP SOT666
PBLS1501V,115 PBLS1501V,115 NXP Semiconductors TRANS NPN PREBIAS/PNP SOT666
PBLS1501V,115 PBLS1501V,115 NXP Semiconductors TRANS NPN PREBIAS/PNP SOT666
PBLS1501V,115 PBLS1501V,115 NXP Semiconductors TRANS NPN PREBIAS/PNP SOT666
NSBC114EDXV6T1G NSBC114EDXV6T1G ON Semiconductor TRANS 2NPN PREBIAS 0.5W SOT563
NSBC114EDXV6T1G NSBC114EDXV6T1G ON Semiconductor TRANS 2NPN PREBIAS 0.5W SOT563
NSBC114EDXV6T1G NSBC114EDXV6T1G ON Semiconductor TRANS 2NPN PREBIAS 0.5W SOT563
MUN5311DW1T1G MUN5311DW1T1G ON Semiconductor TRANS PREBIAS NPN/PNP SOT363
MUN5311DW1T1G MUN5311DW1T1G ON Semiconductor TRANS PREBIAS NPN/PNP SOT363
MUN5311DW1T1G MUN5311DW1T1G ON Semiconductor TRANS PREBIAS NPN/PNP SOT363
MUN5214DW1T1G MUN5214DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
MUN5214DW1T1G MUN5214DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
MUN5214DW1T1G MUN5214DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
MUN5213DW1T1G MUN5213DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
MUN5213DW1T1G MUN5213DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
MUN5213DW1T1G MUN5213DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
MUN5215DW1T1G MUN5215DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
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