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厂商 包装系列晶体管类型电流-集电极(Ic)(最大值)电压-集射极击穿(最大值)电阻器-基底(R1)(欧姆)电阻器-发射极基底(R2)(欧姆)不同Ic,Vce时的DC电流增益(hFE)(最小值)不同Ib,Ic时的Vce饱和值(最大值)电流-集电极截止(最大值)频率-跃迁功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
MUN5333DW1T1G MUN5333DW1T1G ON Semiconductor TRANS PREBIAS NPN/PNP SOT363
MUN5333DW1T1G MUN5333DW1T1G ON Semiconductor TRANS PREBIAS NPN/PNP SOT363
MUN5333DW1T1G MUN5333DW1T1G ON Semiconductor TRANS PREBIAS NPN/PNP SOT363
MUN5314DW1T1G MUN5314DW1T1G ON Semiconductor TRANS PREBIAS NPN/PNP SOT363
MUN5314DW1T1G MUN5314DW1T1G ON Semiconductor TRANS PREBIAS NPN/PNP SOT363
MUN5314DW1T1G MUN5314DW1T1G ON Semiconductor TRANS PREBIAS NPN/PNP SOT363
MUN5233DW1T1G MUN5233DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
MUN5233DW1T1G MUN5233DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
MUN5233DW1T1G MUN5233DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
MUN5230DW1T1G MUN5230DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
MUN5230DW1T1G MUN5230DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
MUN5230DW1T1G MUN5230DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
MUN5312DW1T1G MUN5312DW1T1G ON Semiconductor TRANS PREBIAS NPN/PNP SOT363
MUN5312DW1T1G MUN5312DW1T1G ON Semiconductor TRANS PREBIAS NPN/PNP SOT363
MUN5312DW1T1G MUN5312DW1T1G ON Semiconductor TRANS PREBIAS NPN/PNP SOT363
MUN5212DW1T1G MUN5212DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
MUN5212DW1T1G MUN5212DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
MUN5212DW1T1G MUN5212DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363
NSB1706DMW5T1G NSB1706DMW5T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SC70
NSB1706DMW5T1G NSB1706DMW5T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SC70
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