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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
CAS300M12BM2 CAS300M12BM2 Cree Inc MOSFET 2N-CH 1200V 404A MODULE
CCS020M12CM2 CCS020M12CM2 Cree Inc MOSFET 6N-CH 1200V 29.5A MODULE
CAS120M12BM2 CAS120M12BM2 Cree Inc MOSFET 2N-CH 1200V 193A MODULE
CAS300M17BM2 CAS300M17BM2 Cree Inc MOSFET 2N-CH 1700V 325A MODULE
CCS050M12CM2 CCS050M12CM2 Cree Inc MOSFET 6N-CH 1200V 87A MODULE
CAS100H12AM1 CAS100H12AM1 Cree Inc MOSFET 2N-CH 1200V 168A MODULE
FPF1C2P5MF07AM FPF1C2P5MF07AM Fairchild Semiconductor 650V 30A DC/AC HIGH POWER MOD
FPF1C2P5BF07A FPF1C2P5BF07A Fairchild Semiconductor MOSFET 5N-CH 650V 36A F1 MODULE
FTCO3V455A1 FTCO3V455A1 Fairchild Semiconductor MOSFET 6N-CH 40V 150A MODULE
FD6M033N06 FD6M033N06 Fairchild Semiconductor MOSFET 2N-CH 60V 73A EPM15
FD6M043N08 FD6M043N08 Fairchild Semiconductor MOSFET 2N-CH 75V 65A EPM15
FD6M045N06 FD6M045N06 Fairchild Semiconductor MOSFET 2N-CH 60V 60A EPM15
FD6M016N03 FD6M016N03 Fairchild Semiconductor MOSFET 2N-CH 30V 80A EPM15
GA100SCPL12-227E GA100SCPL12-227E GeneSiC Semiconductor SIC PHASE LEG BRIDGE 100A 1.2KV
IXFN180N25T IXFN180N25T IXYS MOSFET N-CH 250V 168A SOT-227
IXFN200N10P IXFN200N10P IXYS MOSFET N-CH 100V 200A SOT-227B
IXFN520N075T2 IXFN520N075T2 IXYS MOSFET N-CH 75V 480A SOT227
IXFN80N50P IXFN80N50P IXYS MOSFET N-CH 500V 66A SOT-227
IXFN48N50 IXFN48N50 IXYS MOSFET N-CH 500V 48A SOT-227B
IXFN132N50P3 IXFN132N50P3 IXYS MOSFET N-CH 500V 112A SOT227
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