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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IRFBE30L IRFBE30L Vishay Siliconix MOSFET N-CH 800V 4.1A TO-262
IRFBE30S IRFBE30S Vishay Siliconix MOSFET N-CH 800V 4.1A D2PAK
IRFBE30STRL IRFBE30STRL Vishay Siliconix MOSFET N-CH 800V 4.1A D2PAK
IRFBE30STRR IRFBE30STRR Vishay Siliconix MOSFET N-CH 800V 4.1A D2PAK
IRFBF20STRL IRFBF20STRL Vishay Siliconix MOSFET N-CH 900V 1.7A D2PAK
IRFBF20STRR IRFBF20STRR Vishay Siliconix MOSFET N-CH 900V 1.7A D2PAK
IRFBF30L IRFBF30L Vishay Siliconix MOSFET N-CH 900V 3.6A TO-262
IRFBF30S IRFBF30S Vishay Siliconix MOSFET N-CH 900V 3.6A D2PAK
IRFBF30STRL IRFBF30STRL Vishay Siliconix MOSFET N-CH 900V 3.6A D2PAK
IRFBF30STRR IRFBF30STRR Vishay Siliconix MOSFET N-CH 900V 3.6A D2PAK
IRFBG20L IRFBG20L Vishay Siliconix MOSFET N-CH 1000V 1.4A TO-262
IRFI610G IRFI610G Vishay Siliconix MOSFET N-CH 200V 2.6A TO220FP
IRFI710G IRFI710G Vishay Siliconix MOSFET N-CH 400V 1.6A TO220FP
IRFI9520N IRFI9520N Vishay Siliconix MOSFET P-CH 100V 5.5A TO220FP
IRFIBG20G IRFIBG20G Vishay Siliconix MOSFET N-CH 1000V TO-220FP
IRFL214TR IRFL214TR Vishay Siliconix MOSFET N-CH 250V 790MA SOT223
IRFL31N20D IRFL31N20D Vishay Siliconix MOSFET N-CH 200V 31A D2PAK
IRFR010 IRFR010 Vishay Siliconix MOSFET N-CH 50V 8.2A DPAK
IRFR010TRL IRFR010TRL Vishay Siliconix MOSFET N-CH 50V 8.2A DPAK
IRFR010TR IRFR010TR Vishay Siliconix MOSFET N-CH 50V 8.2A DPAK
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