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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
ZXMN6A11GTC ZXMN6A11GTC Diodes Incorporated MOSFET N-CH 60V 3.1A SOT223
ZXMNS3BM832TA ZXMNS3BM832TA Diodes Incorporated MOSFET N-CH 30V 2A 8-MLP
ZXMNS3BM832TA ZXMNS3BM832TA Diodes Incorporated MOSFET N-CH 30V 2A 8-MLP
ZXMNS3BM832TA ZXMNS3BM832TA Diodes Incorporated MOSFET N-CH 30V 2A 8-MLP
ZXMP10A17GTA ZXMP10A17GTA Diodes Incorporated MOSFET P-CH 100V 1.7A SOT223
ZXMP10A17GTA ZXMP10A17GTA Diodes Incorporated MOSFET P-CH 100V 1.7A SOT223
DMN5L06-7 DMN5L06-7 Diodes Incorporated MOSFET N-CH 50V 280MA SOT23-3
DMN5L06-7 DMN5L06-7 Diodes Incorporated MOSFET N-CH 50V 280MA SOT23-3
DMN5L06-7 DMN5L06-7 Diodes Incorporated MOSFET N-CH 50V 280MA SOT23-3
ZXMN6A25G ZXMN6A25G Diodes Incorporated MOSFET N-CH 60V 4.8A SOT223
ZXMN6A25G ZXMN6A25G Diodes Incorporated MOSFET N-CH 60V 4.8A SOT223
ZXMN6A25G ZXMN6A25G Diodes Incorporated MOSFET N-CH 60V 4.8A SOT223
DMN2170U-7 DMN2170U-7 Diodes Incorporated MOSFET N-CH 20V 2.3A SOT23-3
DMN2170U-7 DMN2170U-7 Diodes Incorporated MOSFET N-CH 20V 2.3A SOT23-3
DMN2170U-7 DMN2170U-7 Diodes Incorporated MOSFET N-CH 20V 2.3A SOT23-3
ZXMN0545FFTA ZXMN0545FFTA Diodes Incorporated MOSFET N-CH 450V SOT23F-3
ZXMN0545FFTA ZXMN0545FFTA Diodes Incorporated MOSFET N-CH 450V SOT23F-3
ZXMN0545FFTA ZXMN0545FFTA Diodes Incorporated MOSFET N-CH 450V SOT23F-3
DMN5L06T-7 DMN5L06T-7 Diodes Incorporated MOSFET N-CH 50V 280MA SOT-523
DMN5L06W-7 DMN5L06W-7 Diodes Incorporated MOSFET N-CH 50V 280MA SC70-3
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