中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 123124125126127128129130131132133 1054
PDF 缩略图 器件名称 制造商 描述
ZVP3310ASTZ ZVP3310ASTZ Diodes Incorporated MOSFET P-CH 100V 0.14A TO92-3
ZVP3310FTC ZVP3310FTC Diodes Incorporated MOSFET P-CH 100V 0.075A SOT23-3
ZVP4105ASTOA ZVP4105ASTOA Diodes Incorporated MOSFET P-CH 50V 0.175A TO92-3
ZVP4105ASTOB ZVP4105ASTOB Diodes Incorporated MOSFET P-CH 50V 0.175A TO92-3
ZVP4424ASTOA ZVP4424ASTOA Diodes Incorporated MOSFET P-CH 240V 0.2A TO92-3
ZVP4424ASTOB ZVP4424ASTOB Diodes Incorporated MOSFET P-CH 240V 0.2A TO92-3
ZVP4424GTC ZVP4424GTC Diodes Incorporated MOSFET P-CH 240V 0.48A SOT223
ZVP4525E6TC ZVP4525E6TC Diodes Incorporated MOSFET P-CH 250V 0.197A SOT23-6
ZVP4525GTC ZVP4525GTC Diodes Incorporated MOSFET P-CH 250V 0.265A SOT223
ZXM41N10FTC ZXM41N10FTC Diodes Incorporated MOSFET N-CH 100V 170MA SOT23-3
ZXM62P03GTA ZXM62P03GTA Diodes Incorporated MOSFET P-CH 30V 2.9A SOT223
ZXM66P02N8TC ZXM66P02N8TC Diodes Incorporated MOSFET P-CH 20V 6.4A 8SOIC
ZXMN10A11GTC ZXMN10A11GTC Diodes Incorporated MOSFET N-CH 100V 1.7A SOT223
ZXMN10B08E6TC ZXMN10B08E6TC Diodes Incorporated MOSFET N-CH 100V 1.6A SOT23-6
ZXMN2A01E6TC ZXMN2A01E6TC Diodes Incorporated MOSFET N-CH 20V 2.5A SOT23-6
ZXMN2A03E6TC ZXMN2A03E6TC Diodes Incorporated MOSFET N-CH 20V 3.7A SOT23-6
ZXMN3A01E6TC ZXMN3A01E6TC Diodes Incorporated MOSFET N-CH 30V 2.4A SOT23-6
ZXMN3A03E6TC ZXMN3A03E6TC Diodes Incorporated MOSFET N-CH 30V 3.7A SOT23-6
ZXMN3B04N8TC ZXMN3B04N8TC Diodes Incorporated MOSFET N-CH 30V 7.2A 8SOIC
ZXMN6A08E6TC ZXMN6A08E6TC Diodes Incorporated MOSFET N-CH 60V 2.8A SOT23-6
1... 123124125126127128129130131132133 1054