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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
FDN358P FDN358P Fairchild Semiconductor MOSFET P-CH 30V 1.5A SSOT3
FDN358P FDN358P Fairchild Semiconductor MOSFET P-CH 30V 1.5A SSOT3
FDC655BN FDC655BN Fairchild Semiconductor MOSFET N-CH 30V 6.3A SSOT-6
FDC655BN FDC655BN Fairchild Semiconductor MOSFET N-CH 30V 6.3A SSOT-6
FDC655BN FDC655BN Fairchild Semiconductor MOSFET N-CH 30V 6.3A SSOT-6
FDC602P FDC602P Fairchild Semiconductor MOSFET P-CH 20V 5.5A SSOT-6
FDC602P FDC602P Fairchild Semiconductor MOSFET P-CH 20V 5.5A SSOT-6
FDC602P FDC602P Fairchild Semiconductor MOSFET P-CH 20V 5.5A SSOT-6
FDN5618P FDN5618P Fairchild Semiconductor MOSFET P-CH 60V 1.25A SSOT3
FDN5618P FDN5618P Fairchild Semiconductor MOSFET P-CH 60V 1.25A SSOT3
FDN5618P FDN5618P Fairchild Semiconductor MOSFET P-CH 60V 1.25A SSOT3
FDN304PZ FDN304PZ Fairchild Semiconductor MOSFET P-CH 20V 2.4A SSOT-3
FDN304PZ FDN304PZ Fairchild Semiconductor MOSFET P-CH 20V 2.4A SSOT-3
FDN304PZ FDN304PZ Fairchild Semiconductor MOSFET P-CH 20V 2.4A SSOT-3
FDC610PZ FDC610PZ Fairchild Semiconductor MOSFET P-CH 30V 4.9A SSOT-6
FDC610PZ FDC610PZ Fairchild Semiconductor MOSFET P-CH 30V 4.9A SSOT-6
FDC610PZ FDC610PZ Fairchild Semiconductor MOSFET P-CH 30V 4.9A SSOT-6
FDN339AN FDN339AN Fairchild Semiconductor MOSFET N-CH 20V 3A SSOT3
FDN339AN FDN339AN Fairchild Semiconductor MOSFET N-CH 20V 3A SSOT3
FDN339AN FDN339AN Fairchild Semiconductor MOSFET N-CH 20V 3A SSOT3
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