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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
FDMA430NZ FDMA430NZ Fairchild Semiconductor MOSFET N-CH 30V 5A MICROFET
FDS6612A FDS6612A Fairchild Semiconductor MOSFET N-CH 30V 8.4A 8-SOIC
FDS6612A FDS6612A Fairchild Semiconductor MOSFET N-CH 30V 8.4A 8-SOIC
FDS6612A FDS6612A Fairchild Semiconductor MOSFET N-CH 30V 8.4A 8-SOIC
FDS6630A FDS6630A Fairchild Semiconductor MOSFET N-CH 30V 6.5A 8SOIC
FDS6630A FDS6630A Fairchild Semiconductor MOSFET N-CH 30V 6.5A 8SOIC
FDS6630A FDS6630A Fairchild Semiconductor MOSFET N-CH 30V 6.5A 8SOIC
FDME910PZT FDME910PZT Fairchild Semiconductor MOSFET P CH 20V 8A MICROFET
FDME910PZT FDME910PZT Fairchild Semiconductor MOSFET P CH 20V 8A MICROFET
FDME910PZT FDME910PZT Fairchild Semiconductor MOSFET P CH 20V 8A MICROFET
FDS4435BZ FDS4435BZ Fairchild Semiconductor MOSFET P-CH 30V 8.8A 8-SOIC
FDS4435BZ FDS4435BZ Fairchild Semiconductor MOSFET P-CH 30V 8.8A 8-SOIC
FDS4435BZ FDS4435BZ Fairchild Semiconductor MOSFET P-CH 30V 8.8A 8-SOIC
FDT439N FDT439N Fairchild Semiconductor MOSFET N-CH 30V 6.3A SOT-223
FDT439N FDT439N Fairchild Semiconductor MOSFET N-CH 30V 6.3A SOT-223
FDT439N FDT439N Fairchild Semiconductor MOSFET N-CH 30V 6.3A SOT-223
FDT86113LZ FDT86113LZ Fairchild Semiconductor MOSFET N-CH 100V 3.3A SOT223
FDT86113LZ FDT86113LZ Fairchild Semiconductor MOSFET N-CH 100V 3.3A SOT223
FDT86113LZ FDT86113LZ Fairchild Semiconductor MOSFET N-CH 100V 3.3A SOT223
FDD6630A FDD6630A Fairchild Semiconductor MOSFET N-CH 30V 21A D-PAK
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