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厂商 包装系列FET类型FET功能漏源极电压（Vdss）电流-连续漏极（Id）（25°C时）不同Id，Vgs时的RdsOn（最大值）不同Id时的Vgs（th）（最大值）不同Vgs时的栅极电荷（Qg）不同Vds时的输入电容（Ciss）功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
FDD6N50TM_WS FDD6N50TM_WS Fairchild Semiconductor MOSFET N-CH 500V 6A DPAK
2N7000 2N7000 Fairchild Semiconductor MOSFET N-CH 60V 200MA TO-92
FDT86244 FDT86244 Fairchild Semiconductor MOSFET N-CH 150V 2.8A SOT-223
FDT86244 FDT86244 Fairchild Semiconductor MOSFET N-CH 150V 2.8A SOT-223
FDT86244 FDT86244 Fairchild Semiconductor MOSFET N-CH 150V 2.8A SOT-223
FDD4685 FDD4685 Fairchild Semiconductor MOSFET P-CH 40V 8.4A DPAK
FDD4685 FDD4685 Fairchild Semiconductor MOSFET P-CH 40V 8.4A DPAK
FDD4685 FDD4685 Fairchild Semiconductor MOSFET P-CH 40V 8.4A DPAK
FDN359BN_F095 FDN359BN_F095 Fairchild Semiconductor MOSFET N-CH 30V 2.7A SSOT3
FDN359BN_F095 FDN359BN_F095 Fairchild Semiconductor MOSFET N-CH 30V 2.7A SSOT3
FDN359BN_F095 FDN359BN_F095 Fairchild Semiconductor MOSFET N-CH 30V 2.7A SSOT3
2N7002W 2N7002W Fairchild Semiconductor MOSFET N-CH 60V 115MA SOT-323
2N7002W 2N7002W Fairchild Semiconductor MOSFET N-CH 60V 115MA SOT-323
2N7002W 2N7002W Fairchild Semiconductor MOSFET N-CH 60V 115MA SOT-323
FDN327N FDN327N Fairchild Semiconductor MOSFET N-CH 20V 2A SSOT-3
FDN327N FDN327N Fairchild Semiconductor MOSFET N-CH 20V 2A SSOT-3
FDN327N FDN327N Fairchild Semiconductor MOSFET N-CH 20V 2A SSOT-3
FDN337N FDN337N Fairchild Semiconductor MOSFET N-CH 30V 2.2A SSOT3
FDN337N FDN337N Fairchild Semiconductor MOSFET N-CH 30V 2.2A SSOT3
FDN337N FDN337N Fairchild Semiconductor MOSFET N-CH 30V 2.2A SSOT3
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