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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
FDS9400A FDS9400A Fairchild Semiconductor MOSFET P-CH 30V 3.4A 8SOIC
FDS9400A FDS9400A Fairchild Semiconductor MOSFET P-CH 30V 3.4A 8SOIC
FDS9400A FDS9400A Fairchild Semiconductor MOSFET P-CH 30V 3.4A 8SOIC
FDBL0110N60 FDBL0110N60 Fairchild Semiconductor MOSFET N-CH 60V 300A
FDBL0110N60 FDBL0110N60 Fairchild Semiconductor MOSFET N-CH 60V 300A
FDBL0110N60 FDBL0110N60 Fairchild Semiconductor MOSFET N-CH 60V 300A
FCB20N60F_F085 FCB20N60F_F085 Fairchild Semiconductor MOSFET N CH 600V 20A TO-263AB
FCB20N60F_F085 FCB20N60F_F085 Fairchild Semiconductor MOSFET N CH 600V 20A TO-263AB
FCB20N60F_F085 FCB20N60F_F085 Fairchild Semiconductor MOSFET N CH 600V 20A TO-263AB
FDBL86363_F085 FDBL86363_F085 Fairchild Semiconductor MOSFET N-CH 80V 240A PSOF8
FDBL86363_F085 FDBL86363_F085 Fairchild Semiconductor MOSFET N-CH 80V 240A PSOF8
FDBL86363_F085 FDBL86363_F085 Fairchild Semiconductor MOSFET N-CH 80V 240A PSOF8
FDMT800120DC FDMT800120DC Fairchild Semiconductor MOSFET N-CH 120V 20A/129A
FDMT800120DC FDMT800120DC Fairchild Semiconductor MOSFET N-CH 120V 20A/129A
FDMT800120DC FDMT800120DC Fairchild Semiconductor MOSFET N-CH 120V 20A/129A
FDH210N08 FDH210N08 Fairchild Semiconductor MOSFET N-CH 75V 210A TO-247-3
FDBL0150N60 FDBL0150N60 Fairchild Semiconductor MOSFET N-CH 60V 300A
FDBL0150N60 FDBL0150N60 Fairchild Semiconductor MOSFET N-CH 60V 300A
FDS6679AZ FDS6679AZ Fairchild Semiconductor MOSFET P-CH 30V 13A 8-SOIC
FDBL0150N60 FDBL0150N60 Fairchild Semiconductor MOSFET N-CH 60V 300A
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