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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
FDS2672 FDS2672 Fairchild Semiconductor MOSFET N-CH 200V 3.9A 8-SOIC
FDS2672 FDS2672 Fairchild Semiconductor MOSFET N-CH 200V 3.9A 8-SOIC
FDS2672 FDS2672 Fairchild Semiconductor MOSFET N-CH 200V 3.9A 8-SOIC
FDS6681Z FDS6681Z Fairchild Semiconductor MOSFET P-CH 30V 20A SO-8
FDS6681Z FDS6681Z Fairchild Semiconductor MOSFET P-CH 30V 20A SO-8
FDS6681Z FDS6681Z Fairchild Semiconductor MOSFET P-CH 30V 20A SO-8
NDB6020P NDB6020P Fairchild Semiconductor MOSFET P-CH 20V 24A D2PAK
NDB6020P NDB6020P Fairchild Semiconductor MOSFET P-CH 20V 24A D2PAK
NDB6020P NDB6020P Fairchild Semiconductor MOSFET P-CH 20V 24A D2PAK
FDS86141 FDS86141 Fairchild Semiconductor MOSFET N-CH 100V 7A 8-SOIC
FDS86141 FDS86141 Fairchild Semiconductor MOSFET N-CH 100V 7A 8-SOIC
FDS86141 FDS86141 Fairchild Semiconductor MOSFET N-CH 100V 7A 8-SOIC
FDS2670 FDS2670 Fairchild Semiconductor MOSFET N-CH 200V 3A SO-8
FDS2670 FDS2670 Fairchild Semiconductor MOSFET N-CH 200V 3A SO-8
FDS2670 FDS2670 Fairchild Semiconductor MOSFET N-CH 200V 3A SO-8
FDS6680A FDS6680A Fairchild Semiconductor MOSFET N-CH 30V 12.5A 8-SOIC
FDS6680A FDS6680A Fairchild Semiconductor MOSFET N-CH 30V 12.5A 8-SOIC
FDS6680A FDS6680A Fairchild Semiconductor MOSFET N-CH 30V 12.5A 8-SOIC
FDB070AN06A0 FDB070AN06A0 Fairchild Semiconductor MOSFET N-CH 60V 80A TO-263AB
FDB070AN06A0 FDB070AN06A0 Fairchild Semiconductor MOSFET N-CH 60V 80A TO-263AB
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