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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
FDD3N40TM FDD3N40TM Fairchild Semiconductor MOSFET N-CH 400V 2A DPAK
FDD3N40TM FDD3N40TM Fairchild Semiconductor MOSFET N-CH 400V 2A DPAK
FQD1N60CTM FQD1N60CTM Fairchild Semiconductor MOSFET N-CH 600V 1A DPAK
FQD1N60CTM FQD1N60CTM Fairchild Semiconductor MOSFET N-CH 600V 1A DPAK
FQD1N60CTM FQD1N60CTM Fairchild Semiconductor MOSFET N-CH 600V 1A DPAK
FDT3N40TF FDT3N40TF Fairchild Semiconductor MOSFET N-CH 400V 2A SOT-223
FDT3N40TF FDT3N40TF Fairchild Semiconductor MOSFET N-CH 400V 2A SOT-223
FDT3N40TF FDT3N40TF Fairchild Semiconductor MOSFET N-CH 400V 2A SOT-223
FDT3N40TF FDT3N40TF Fairchild Semiconductor MOSFET N-CH 400V 2A SOT-223
FDT3N40TF FDT3N40TF Fairchild Semiconductor MOSFET N-CH 400V 2A SOT-223
FDT3N40TF FDT3N40TF Fairchild Semiconductor MOSFET N-CH 400V 2A SOT-223
RFD3055LESM9A RFD3055LESM9A Fairchild Semiconductor MOSFET N-CH 60V 11A TO-252AA
RFD3055LESM9A RFD3055LESM9A Fairchild Semiconductor MOSFET N-CH 60V 11A TO-252AA
RFD3055LESM9A RFD3055LESM9A Fairchild Semiconductor MOSFET N-CH 60V 11A TO-252AA
FDME410NZT FDME410NZT Fairchild Semiconductor MOSFET N-CH 20V 7A 6-MICROFET
FDD8880 FDD8880 Fairchild Semiconductor MOSFET N-CH 30V 58A DPAK
FDD8880 FDD8880 Fairchild Semiconductor MOSFET N-CH 30V 58A DPAK
FDD8880 FDD8880 Fairchild Semiconductor MOSFET N-CH 30V 58A DPAK
FDD8880 FDD8880 Fairchild Semiconductor MOSFET N-CH 30V 58A DPAK
FDD8880 FDD8880 Fairchild Semiconductor MOSFET N-CH 30V 58A DPAK
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