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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
FDN342P FDN342P Fairchild Semiconductor MOSFET P-CH 20V 2A SSOT-3
FDC658P FDC658P Fairchild Semiconductor MOSFET P-CH 30V 4A SSOT-6
FDC658P FDC658P Fairchild Semiconductor MOSFET P-CH 30V 4A SSOT-6
FDC658P FDC658P Fairchild Semiconductor MOSFET P-CH 30V 4A SSOT-6
FDME510PZT FDME510PZT Fairchild Semiconductor MOSFET P-CH 20V 6-MICROFET
FDME510PZT FDME510PZT Fairchild Semiconductor MOSFET P-CH 20V 6-MICROFET
FDME510PZT FDME510PZT Fairchild Semiconductor MOSFET P-CH 20V 6-MICROFET
FDG315N FDG315N Fairchild Semiconductor MOSFET N-CH 30V 2A SC70-6
FDG315N FDG315N Fairchild Semiconductor MOSFET N-CH 30V 2A SC70-6
FDG315N FDG315N Fairchild Semiconductor MOSFET N-CH 30V 2A SC70-6
FDG315N FDG315N Fairchild Semiconductor MOSFET N-CH 30V 2A SC70-6
FDG315N FDG315N Fairchild Semiconductor MOSFET N-CH 30V 2A SC70-6
FDG315N FDG315N Fairchild Semiconductor MOSFET N-CH 30V 2A SC70-6
FDD6N25TM FDD6N25TM Fairchild Semiconductor MOSFET N-CH 250V 4.4A DPAK
FDD6N25TM FDD6N25TM Fairchild Semiconductor MOSFET N-CH 250V 4.4A DPAK
FDD6N25TM FDD6N25TM Fairchild Semiconductor MOSFET N-CH 250V 4.4A DPAK
FQD7N10LTM FQD7N10LTM Fairchild Semiconductor MOSFET N-CH 100V 5.8A DPAK
FQD7N10LTM FQD7N10LTM Fairchild Semiconductor MOSFET N-CH 100V 5.8A DPAK
FQD7N10LTM FQD7N10LTM Fairchild Semiconductor MOSFET N-CH 100V 5.8A DPAK
FDD3N40TM FDD3N40TM Fairchild Semiconductor MOSFET N-CH 400V 2A DPAK
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