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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
BUZ11_NR4941 BUZ11_NR4941 Fairchild Semiconductor MOSFET N-CH 50V 30A TO-220AB
FDS6699S FDS6699S Fairchild Semiconductor MOSFET N-CH 30V 21A 8SOIC
FDS6699S FDS6699S Fairchild Semiconductor MOSFET N-CH 30V 21A 8SOIC
FDS6699S FDS6699S Fairchild Semiconductor MOSFET N-CH 30V 21A 8SOIC
FDS6670A FDS6670A Fairchild Semiconductor MOSFET N-CH 30V 13A 8-SOIC
FDS6670A FDS6670A Fairchild Semiconductor MOSFET N-CH 30V 13A 8-SOIC
FDS6670A FDS6670A Fairchild Semiconductor MOSFET N-CH 30V 13A 8-SOIC
RFP50N06 RFP50N06 Fairchild Semiconductor MOSFET N-CH 60V 50A TO-220AB
FDB050AN06A0 FDB050AN06A0 Fairchild Semiconductor MOSFET N-CH 60V 80A TO-263AB
FDB050AN06A0 FDB050AN06A0 Fairchild Semiconductor MOSFET N-CH 60V 80A TO-263AB
FDB050AN06A0 FDB050AN06A0 Fairchild Semiconductor MOSFET N-CH 60V 80A TO-263AB
FQPF9N50CF FQPF9N50CF Fairchild Semiconductor MOSFET N-CH 500V 9A TO-220F
FQB4N80TM FQB4N80TM Fairchild Semiconductor MOSFET N-CH 800V 3.9A D2PAK
FQB4N80TM FQB4N80TM Fairchild Semiconductor MOSFET N-CH 800V 3.9A D2PAK
FQB4N80TM FQB4N80TM Fairchild Semiconductor MOSFET N-CH 800V 3.9A D2PAK
FQI13N50CTU FQI13N50CTU Fairchild Semiconductor MOSFET N-CH 500V 13A I2PAK
RFP70N06 RFP70N06 Fairchild Semiconductor MOSFET N-CH 60V 70A TO-220AB
FDB8896 FDB8896 Fairchild Semiconductor MOSFET N-CH 30V 93A TO-263AB
FDB8896 FDB8896 Fairchild Semiconductor MOSFET N-CH 30V 93A TO-263AB
FDB8896 FDB8896 Fairchild Semiconductor MOSFET N-CH 30V 93A TO-263AB
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