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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
FDS4470 FDS4470 Fairchild Semiconductor MOSFET N-CH 40V 12.5A 8SOIC
FDS4470 FDS4470 Fairchild Semiconductor MOSFET N-CH 40V 12.5A 8SOIC
FQB5N90TM FQB5N90TM Fairchild Semiconductor MOSFET N-CH 900V 5.4A D2PAK
FQB5N90TM FQB5N90TM Fairchild Semiconductor MOSFET N-CH 900V 5.4A D2PAK
FQB5N90TM FQB5N90TM Fairchild Semiconductor MOSFET N-CH 900V 5.4A D2PAK
FQB6N80TM FQB6N80TM Fairchild Semiconductor MOSFET N-CH 800V 5.8A D2PAK
FQB6N80TM FQB6N80TM Fairchild Semiconductor MOSFET N-CH 800V 5.8A D2PAK
FQB6N80TM FQB6N80TM Fairchild Semiconductor MOSFET N-CH 800V 5.8A D2PAK
FQP22N30 FQP22N30 Fairchild Semiconductor MOSFET N-CH 300V 21A TO-220
FQP3P50 FQP3P50 Fairchild Semiconductor MOSFET P-CH 500V 2.7A TO-220
FDS86140 FDS86140 Fairchild Semiconductor MOSFET N-CH 100V 11.2A 8SOIC
FDS86140 FDS86140 Fairchild Semiconductor MOSFET N-CH 100V 11.2A 8SOIC
FDS86140 FDS86140 Fairchild Semiconductor MOSFET N-CH 100V 11.2A 8SOIC
FDB2614 FDB2614 Fairchild Semiconductor MOSFET N-CH 200V 62A D2PAK
FDB2614 FDB2614 Fairchild Semiconductor MOSFET N-CH 200V 62A D2PAK
FDB2614 FDB2614 Fairchild Semiconductor MOSFET N-CH 200V 62A D2PAK
FDP52N20 FDP52N20 Fairchild Semiconductor MOSFET N-CH 200V 52A TO-220
FQB34N20LTM FQB34N20LTM Fairchild Semiconductor MOSFET N-CH 200V 31A D2PAK
FQB34N20LTM FQB34N20LTM Fairchild Semiconductor MOSFET N-CH 200V 31A D2PAK
FQB34N20LTM FQB34N20LTM Fairchild Semiconductor MOSFET N-CH 200V 31A D2PAK
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