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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
IRFP350LCPBF IRFP350LCPBF Vishay Siliconix MOSFET N-CH 400V 16A TO-247AC
IRFP23N50LPBF IRFP23N50LPBF Vishay Siliconix MOSFET N-CH 500V 23A TO-247AC
SI5458DU-T1-GE3 SI5458DU-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6A PPAK CHIPFET
SI5458DU-T1-GE3 SI5458DU-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6A PPAK CHIPFET
SI5458DU-T1-GE3 SI5458DU-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 6A PPAK CHIPFET
SI4823DY-T1-GE3 SI4823DY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.1A 8-SOIC
SI4823DY-T1-GE3 SI4823DY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.1A 8-SOIC
SI4823DY-T1-GE3 SI4823DY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 4.1A 8-SOIC
IRFR220TRLPBF IRFR220TRLPBF Vishay Siliconix MOSFET N-CH 200V 4.8A DPAK
IRFR220TRLPBF IRFR220TRLPBF Vishay Siliconix MOSFET N-CH 200V 4.8A DPAK
IRFR220TRLPBF IRFR220TRLPBF Vishay Siliconix MOSFET N-CH 200V 4.8A DPAK
SI3430DV-T1-GE3 SI3430DV-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 1.8A 6-TSOP
SI3430DV-T1-GE3 SI3430DV-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 1.8A 6-TSOP
SI3430DV-T1-GE3 SI3430DV-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 1.8A 6-TSOP
IRFR120TRPBF IRFR120TRPBF Vishay Siliconix MOSFET N-CH 100V 7.7A DPAK
IRFR120TRPBF IRFR120TRPBF Vishay Siliconix MOSFET N-CH 100V 7.7A DPAK
IRFR120TRPBF IRFR120TRPBF Vishay Siliconix MOSFET N-CH 100V 7.7A DPAK
SIB417AEDK-T1-GE3 SIB417AEDK-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 9A PWRPACK
SIB417AEDK-T1-GE3 SIB417AEDK-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 9A PWRPACK
SIB417AEDK-T1-GE3 SIB417AEDK-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 9A PWRPACK
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