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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4100DY-T1-E3 SI4100DY-T1-E3 Vishay Siliconix MOSFET N-CH 100V 6.8A 8-SOIC
IRFR1N60ATRPBF IRFR1N60ATRPBF Vishay Siliconix MOSFET N-CH 600V 1.4A DPAK
IRFR1N60ATRPBF IRFR1N60ATRPBF Vishay Siliconix MOSFET N-CH 600V 1.4A DPAK
IRFR1N60ATRPBF IRFR1N60ATRPBF Vishay Siliconix MOSFET N-CH 600V 1.4A DPAK
IRFD123PBF IRFD123PBF Vishay Siliconix MOSFET N-CH 100V 1.3A 4-DIP
IRFD010PBF IRFD010PBF Vishay Siliconix MOSFET N-CH 50V 1.7A 4-DIP
IRF9510STRLPBF IRF9510STRLPBF Vishay Siliconix MOSFET P-CH 100V 4A D2PAK
IRF9510STRLPBF IRF9510STRLPBF Vishay Siliconix MOSFET P-CH 100V 4A D2PAK
IRF9510STRLPBF IRF9510STRLPBF Vishay Siliconix MOSFET P-CH 100V 4A D2PAK
IRF634PBF IRF634PBF Vishay Siliconix MOSFET N-CH 250V 8.1A TO-220AB
IRF720SPBF IRF720SPBF Vishay Siliconix MOSFET N-CH 400V 3.3A D2PAK
IRF740BPBF IRF740BPBF Vishay Siliconix MOSFET N-CH 400V 10A TO-220AB
SI4166DY-T1-GE3 SI4166DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 30.5A 8-SOIC
SI4166DY-T1-GE3 SI4166DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 30.5A 8-SOIC
SI4166DY-T1-GE3 SI4166DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 30.5A 8-SOIC
SI4166DY-T1-GE3 SI4166DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 30.5A 8-SOIC
SI4166DY-T1-GE3 SI4166DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 30.5A 8-SOIC
IRFU9120PBF IRFU9120PBF Vishay Siliconix MOSFET P-CH 100V 5.6A I-PAK
IRFU9010PBF IRFU9010PBF Vishay Siliconix MOSFET P-CH 50V 5.3A I-PAK
IRFR310PBF IRFR310PBF Vishay Siliconix MOSFET N-CH 400V 1.7A DPAK
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