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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIS438DN-T1-GE3 SIS438DN-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 16A PPAK 1212-8
IRFR9014PBF IRFR9014PBF Vishay Siliconix MOSFET P-CH 60V 5.1A DPAK
IRFR9010PBF IRFR9010PBF Vishay Siliconix MOSFET P-CH 50V 5.3A DPAK
SI4434DY-T1-E3 SI4434DY-T1-E3 Vishay Siliconix MOSFET N-CH 250V 2.1A 8-SOIC
SI4434DY-T1-E3 SI4434DY-T1-E3 Vishay Siliconix MOSFET N-CH 250V 2.1A 8-SOIC
SI4434DY-T1-E3 SI4434DY-T1-E3 Vishay Siliconix MOSFET N-CH 250V 2.1A 8-SOIC
SI4434DY-T1-E3 SI4434DY-T1-E3 Vishay Siliconix MOSFET N-CH 250V 2.1A 8-SOIC
SI4434DY-T1-E3 SI4434DY-T1-E3 Vishay Siliconix MOSFET N-CH 250V 2.1A 8-SOIC
SI4434DY-T1-E3 SI4434DY-T1-E3 Vishay Siliconix MOSFET N-CH 250V 2.1A 8-SOIC
SIA413DJ-T1-GE3 SIA413DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 12A SC70-6
SIA413DJ-T1-GE3 SIA413DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 12A SC70-6
SIA413DJ-T1-GE3 SIA413DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 12A SC70-6
IRFR9120PBF IRFR9120PBF Vishay Siliconix MOSFET P-CH 100V 5.6A DPAK
SI4464DY-T1-GE3 SI4464DY-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 1.7A 8-SOIC
SI4464DY-T1-GE3 SI4464DY-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 1.7A 8-SOIC
SI4464DY-T1-GE3 SI4464DY-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 1.7A 8-SOIC
IRFU320PBF IRFU320PBF Vishay Siliconix MOSFET N-CH 400V 3.1A I-PAK
IRFD9010PBF IRFD9010PBF Vishay Siliconix MOSFET P-CH 50V 1.1A 4-DIP
IRLR120PBF IRLR120PBF Vishay Siliconix MOSFET N-CH 100V 7.7A DPAK
IRFU9024PBF IRFU9024PBF Vishay Siliconix MOSFET P-CH 60V 8.8A I-PAK
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