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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 30A 1212-8
SIS435DNT-T1-GE3 SIS435DNT-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 30A 1212-8
IRFR110PBF IRFR110PBF Vishay Siliconix MOSFET N-CH 100V 4.3A DPAK
SI7464DP-T1-GE3 SI7464DP-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 1.8A PPAK SO-8
SI7464DP-T1-GE3 SI7464DP-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 1.8A PPAK SO-8
SI7464DP-T1-GE3 SI7464DP-T1-GE3 Vishay Siliconix MOSFET N-CH 200V 1.8A PPAK SO-8
SI7464DP-T1-E3 SI7464DP-T1-E3 Vishay Siliconix MOSFET N-CH 200V 1.8A PPAK SO-8
SI7464DP-T1-E3 SI7464DP-T1-E3 Vishay Siliconix MOSFET N-CH 200V 1.8A PPAK SO-8
SI7464DP-T1-E3 SI7464DP-T1-E3 Vishay Siliconix MOSFET N-CH 200V 1.8A PPAK SO-8
SI8439DB-T1-E1 SI8439DB-T1-E1 Vishay Siliconix MOSFET P-CH 8V MICROFOOT
SI8439DB-T1-E1 SI8439DB-T1-E1 Vishay Siliconix MOSFET P-CH 8V MICROFOOT
SI8439DB-T1-E1 SI8439DB-T1-E1 Vishay Siliconix MOSFET P-CH 8V MICROFOOT
SI4465ADY-T1-GE3 SI4465ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 8SOIC
SI4465ADY-T1-GE3 SI4465ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 8SOIC
SI4465ADY-T1-GE3 SI4465ADY-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 8SOIC
IRLR014PBF IRLR014PBF Vishay Siliconix MOSFET N-CH 60V 7.7A DPAK
IRL640STRLPBF IRL640STRLPBF Vishay Siliconix MOSFET N-CH 200V 17A D2PAK
IRL640STRLPBF IRL640STRLPBF Vishay Siliconix MOSFET N-CH 200V 17A D2PAK
SIS438DN-T1-GE3 SIS438DN-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 16A PPAK 1212-8
SIS438DN-T1-GE3 SIS438DN-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 16A PPAK 1212-8
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