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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI1403CDL-T1-GE3 SI1403CDL-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 2.1A SC-70-6
SI8812DB-T2-E1 SI8812DB-T2-E1 Vishay Siliconix MOSFET N-CH 20V MICROFOOT
SI8812DB-T2-E1 SI8812DB-T2-E1 Vishay Siliconix MOSFET N-CH 20V MICROFOOT
SI8812DB-T2-E1 SI8812DB-T2-E1 Vishay Siliconix MOSFET N-CH 20V MICROFOOT
SIR460DP-T1-GE3 SIR460DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8
SIR460DP-T1-GE3 SIR460DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8
SIR460DP-T1-GE3 SIR460DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8
SIR460DP-T1-GE3 SIR460DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8
SIR460DP-T1-GE3 SIR460DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8
SIR460DP-T1-GE3 SIR460DP-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 40A PPAK SO-8
SI4168DY-T1-GE3 SI4168DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 24A 8-SOIC
SI4168DY-T1-GE3 SI4168DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 24A 8-SOIC
SI4168DY-T1-GE3 SI4168DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 24A 8-SOIC
IRLR120TRPBF IRLR120TRPBF Vishay Siliconix MOSFET N-CH 100V 7.7A DPAK
IRLR120TRPBF IRLR120TRPBF Vishay Siliconix MOSFET N-CH 100V 7.7A DPAK
IRLR120TRPBF IRLR120TRPBF Vishay Siliconix MOSFET N-CH 100V 7.7A DPAK
SIA449DJ-T1-GE3 SIA449DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 12A SC70-6
SIA449DJ-T1-GE3 SIA449DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 12A SC70-6
SIA449DJ-T1-GE3 SIA449DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 30V 12A SC70-6
SIA406DJ-T1-GE3 SIA406DJ-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 4.5A SC-70-6
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