中电网首页

产品索引  > 分立半导体产品 > FET - 单

厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
1... 923924925926927928929930931932933 1054
PDF 缩略图 器件名称 制造商 描述
SIA467EDJ-T1-GE3 SIA467EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 31A SC70-6
SIA467EDJ-T1-GE3 SIA467EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 31A SC70-6
SIA467EDJ-T1-GE3 SIA467EDJ-T1-GE3 Vishay Siliconix MOSFET P-CH 12V 31A SC70-6
SI4778DY-T1-GE3 SI4778DY-T1-GE3 Vishay Siliconix MOSFET N-CH 25V 8A 8-SOIC
SI4778DY-T1-GE3 SI4778DY-T1-GE3 Vishay Siliconix MOSFET N-CH 25V 8A 8-SOIC
SI4778DY-T1-GE3 SI4778DY-T1-GE3 Vishay Siliconix MOSFET N-CH 25V 8A 8-SOIC
SIA437DJ-T1-GE3 SIA437DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 29.7A SC70-6
SIA437DJ-T1-GE3 SIA437DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 29.7A SC70-6
SIA437DJ-T1-GE3 SIA437DJ-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 29.7A SC70-6
SI1499DH-T1-GE3 SI1499DH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 1.6A SC-70-6
SI1499DH-T1-GE3 SI1499DH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 1.6A SC-70-6
SI1499DH-T1-GE3 SI1499DH-T1-GE3 Vishay Siliconix MOSFET P-CH 8V 1.6A SC-70-6
SIS406DN-T1-GE3 SIS406DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9A 1212-8 PPAK
SIS406DN-T1-GE3 SIS406DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9A 1212-8 PPAK
SIS406DN-T1-GE3 SIS406DN-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 9A 1212-8 PPAK
SI5406CDC-T1-GE3 SI5406CDC-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 6A 1206-8
SI5406CDC-T1-GE3 SI5406CDC-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 6A 1206-8
SI5406CDC-T1-GE3 SI5406CDC-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 6A 1206-8
SI4162DY-T1-GE3 SI4162DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 19.3A 8-SOIC
SI4162DY-T1-GE3 SI4162DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 19.3A 8-SOIC
1... 923924925926927928929930931932933 1054