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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4102DY-T1-GE3 SI4102DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 3.8A 8-SOIC
SI4686DY-T1-E3 SI4686DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 18.2A 8-SOIC
SI4686DY-T1-E3 SI4686DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 18.2A 8-SOIC
SI4686DY-T1-E3 SI4686DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 18.2A 8-SOIC
SI7434DP-T1-GE3 SI7434DP-T1-GE3 Vishay Siliconix MOSFET N-CH 250V 2.3A PPAK SO-8
SI7434DP-T1-GE3 SI7434DP-T1-GE3 Vishay Siliconix MOSFET N-CH 250V 2.3A PPAK SO-8
SI7434DP-T1-GE3 SI7434DP-T1-GE3 Vishay Siliconix MOSFET N-CH 250V 2.3A PPAK SO-8
SI7434DP-T1-E3 SI7434DP-T1-E3 Vishay Siliconix MOSFET N-CH 250V 2.3A PPAK SO-8
SI7434DP-T1-E3 SI7434DP-T1-E3 Vishay Siliconix MOSFET N-CH 250V 2.3A PPAK SO-8
SI7434DP-T1-E3 SI7434DP-T1-E3 Vishay Siliconix MOSFET N-CH 250V 2.3A PPAK SO-8
IRLZ24PBF IRLZ24PBF Vishay Siliconix MOSFET N-CH 60V 17A TO-220AB
IRL530PBF IRL530PBF Vishay Siliconix MOSFET N-CH 100V 15A TO-220AB
SI4442DY-T1-E3 SI4442DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 15A 8-SOIC
SI4442DY-T1-E3 SI4442DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 15A 8-SOIC
SI4442DY-T1-E3 SI4442DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 15A 8-SOIC
SI4477DY-T1-GE3 SI4477DY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 26.6A 8-SOIC
SI4477DY-T1-GE3 SI4477DY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 26.6A 8-SOIC
SI4477DY-T1-GE3 SI4477DY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 26.6A 8-SOIC
IRLZ34PBF IRLZ34PBF Vishay Siliconix MOSFET N-CH 60V 30A TO-220AB
SI4090DY-T1-GE3 SI4090DY-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 19.7A 8SOIC
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