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厂商 包装系列FET类型FET功能漏源极电压(Vdss)电流-连续漏极(Id)(25°C时)不同Id,Vgs时的RdsOn(最大值)不同Id时的Vgs(th)(最大值)不同Vgs时的栅极电荷(Qg)不同Vds时的输入电容(Ciss)功率-最大值安装类型封装/外壳供应商器件封装
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PDF 缩略图 器件名称 制造商 描述
SI4488DY-T1-E3 SI4488DY-T1-E3 Vishay Siliconix MOSFET N-CH 150V 3.5A 8-SOIC
SI4488DY-T1-E3 SI4488DY-T1-E3 Vishay Siliconix MOSFET N-CH 150V 3.5A 8-SOIC
SI4488DY-T1-E3 SI4488DY-T1-E3 Vishay Siliconix MOSFET N-CH 150V 3.5A 8-SOIC
SI4413ADY-T1-E3 SI4413ADY-T1-E3 Vishay Siliconix MOSFET P-CH 30V 10.5A 8-SOIC
SI4413ADY-T1-E3 SI4413ADY-T1-E3 Vishay Siliconix MOSFET P-CH 30V 10.5A 8-SOIC
SI4413ADY-T1-E3 SI4413ADY-T1-E3 Vishay Siliconix MOSFET P-CH 30V 10.5A 8-SOIC
SI4447DY-T1-E3 SI4447DY-T1-E3 Vishay Siliconix MOSFET P-CH 40V 3.3A 8-SOIC
SI4447DY-T1-E3 SI4447DY-T1-E3 Vishay Siliconix MOSFET P-CH 40V 3.3A 8-SOIC
SI4447DY-T1-E3 SI4447DY-T1-E3 Vishay Siliconix MOSFET P-CH 40V 3.3A 8-SOIC
IRFL210TRPBF IRFL210TRPBF Vishay Siliconix MOSFET N-CH 200V 0.96A SOT223
IRFL210TRPBF IRFL210TRPBF Vishay Siliconix MOSFET N-CH 200V 0.96A SOT223
IRFL210TRPBF IRFL210TRPBF Vishay Siliconix MOSFET N-CH 200V 0.96A SOT223
SI7898DP-T1-GE3 SI7898DP-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 3A PPAK SO-8
SI7898DP-T1-GE3 SI7898DP-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 3A PPAK SO-8
SI7898DP-T1-GE3 SI7898DP-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 3A PPAK SO-8
IRFD110PBF IRFD110PBF Vishay Siliconix MOSFET N-CH 100V 1A 4-DIP
IRLD120PBF IRLD120PBF Vishay Siliconix MOSFET N-CH 100V 1.3A 4-DIP
SI4842BDY-T1-GE3 SI4842BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 28A 8-SOIC
SI4842BDY-T1-GE3 SI4842BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 28A 8-SOIC
SI4842BDY-T1-GE3 SI4842BDY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 28A 8-SOIC
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